Investigation of the electrophysical and mechanical properties of metallization based on alloys W with Re, Ti, N for high-temperature silicon VLSI

A. V. Timakov; V. I. Shevyakov

doi:10.1117/12.2624348

30 January 2022 Investigation of the electrophysical and mechanical properties of metallization based on alloys W with Re, Ti, N for high-temperature silicon VLSI

A. V. Timakov, V. I. Shevyakov

Author Affiliations +

Proceedings Volume 12157, International Conference on Micro- and Nano-Electronics 2021; 1215719 (2022) https://doi.org/10.1117/12.2624348
Event: International Conference on Micro- and Nano-Electronics 2021, 2021, Zvenigorod, Russian Federation

Abstract

It is shown that today one of the priority directions of development of the electronic industry both abroad and in our country is the creation of silicon semiconductor devices and ICs with submicron topological norms, capable of functioning at temperatures of 200 °C and above. It is noted that although in modern ICs aluminum (with additions of silicon and copper) and copper are used as the interconnect material, recently researchers have shown interest in using tungsten as an interconnect material, which is characterized by high electromigration resistance. In the study of the mechanical properties of alloys W with Re, Ti, N films it was found that they are characterized by a reduced level of mechanical stresses compared with the built-in mechanical stresses in the W – Si structure. It was revealed that the alloy films have satisfactory adhesion to silicon and silicon oxide. Tungsten and its alloys films deposited on silicon from the point of view of their use as interconnects in high-temperature silicon ICs, confirmed the prospects for use in VLSI based on a comparative analysis of electrophysical and mechanical characteristics.

Citation Download Citation

A. V. Timakov and V. I. Shevyakov "Investigation of the electrophysical and mechanical properties of metallization based on alloys W with Re, Ti, N for high-temperature silicon VLSI", Proc. SPIE 12157, International Conference on Micro- and Nano-Electronics 2021, 1215719 (30 January 2022); https://doi.org/10.1117/12.2624348

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available