Presentation + Paper
11 March 2024 High-power 150 mW extended cavity Si3N4 tunable narrow-linewidth laser
Author Affiliations +
Proceedings Volume 12892, Optical Interconnects XXIV; 128920J (2024) https://doi.org/10.1117/12.3003689
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
Chilas develops off-the-shelf laser sources based on hybrid integration of Photonic Integrated Chips (PICs). Combining the high optical powers of semiconducting optical amplifiers (SOAs) with low-loss wavelength tunable mirror structures on Si3N4 PICs results in compact and robust tunable laser sources. These extended cavity diode lasers (ECDLs) exhibit unique characteristics like wide tuning ranges (>100 nm), ultra-narrow linewidths (<1 kHz) and high output powers. Here we present up to 162.5 mW of optical output power by combining two SOAs inside a single cavity, thereby scaling the output power without the need of additional optical amplification on the output port. The presented laser operates inside the telecom C-band, but the strategy can be tailored to other wavelengths like 850 nm, 780 nm and 690 nm, where Si3N4 plays a key role. This new generation of hybrid integrated ECDLs, exhibiting high optical output powers, wide wavelength tuning ranges and ultra narrow linewidths, opens up a wide range of applications.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Albert van Rees, Wilson Tsong, Ian van den Vlekkert, Fathema Farjana, Rob E. M. Lammerink, Ilka Visscher, Chris G. H. Roeloffzen, Sami Musa, and Dimitri Geskus "High-power 150 mW extended cavity Si3N4 tunable narrow-linewidth laser", Proc. SPIE 12892, Optical Interconnects XXIV, 128920J (11 March 2024); https://doi.org/10.1117/12.3003689
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KEYWORDS
Laser frequency

Tunable lasers

Laser resonators

Waveguides

Semiconductor lasers

Silicon

High power lasers

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