In-situ monitoring of submicron polysilicon linewidths using diffraction gratings

Phillip Chapados Jr.; Ajit P. Paranjpe

doi:10.1117/12.142923

16 April 1993 In-situ monitoring of submicron polysilicon linewidths using diffraction gratings

Phillip Chapados Jr., Ajit P. Paranjpe

Proceedings Volume 1803, Advanced Techniques for Integrated Circuit Processing II; (1993) https://doi.org/10.1117/12.142923
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

The measurement of pattern integrity is performed as a part of process control in all wafer manufacturing environments. Typically this measurement is performed off-line on pilot material using a top down scanning electron microscope (SEM). With the advent of sub- micron geometries and small lot wafer fabrication centers, it has become important to monitor the processes on a wafer by wafer basis. An in situ technique using diffraction grating test patterns has been used to monitor the pre-etch and post-etch linewidths on a polysilicon etch chamber. The technique is capable of linewidth measurements to 0.25 microns with pitches as small as 0.7 microns. A comparison of the in situ polysilicon linewidth measurements with off-line SEM measurements shows measurement differences of less than 10% indicating a measurement accuracy on that order. The repeatability of the diffraction technique is shown to be approximately 0.01 micron in comparison to the typical SEM repeatability of 0.025 micron.

Citation Download Citation

Phillip Chapados Jr. and Ajit P. Paranjpe "In-situ monitoring of submicron polysilicon linewidths using diffraction gratings", Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); https://doi.org/10.1117/12.142923

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