Epitaxial structures based on narrow band-gap InAs1-x-ySbxBiy solid solutions

Rauf Kh. Akchurin; V. A. Zhegalin; T. V. Sakharova; S. V. Seregin

doi:10.1117/12.280459

26 August 1997 Epitaxial structures based on narrow band-gap InAs_1-x-ySb_xBi_y solid solutions

Rauf Kh. Akchurin, V. A. Zhegalin, T. V. Sakharova, S. V. Seregin

Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280459
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine

Abstract

The technique of InAs_1-x-ySb_xBi_y/InSb heterostructures forming by LPE was developed to obtain semiconductor material with intrinsic absorption edge (gamma) > 8 micrometers at 77K. Smooth epilayers with x equals 0.88-0.97 and y equals 0.0016-0.0036 were grown on InSb(111)A substrates in 380 450 degrees C temperature range. E_g(77K) values, obtained from optical absorption spectra measurements, were found to decrease by 0.017-0.020 eV as compared to InAs_1-xSb_x with the same x. The possibilities of InAs_1-x-ySb_xBi_y/InSb strained multilayer heterostructures as semiconductor material for long- wavelength applications have been analyzed. Results of our calculation demonstrate that the strain-induced energy band- gap shift in such structures enables the attainment of 0.07- 0.15 eV E_g values at 77K for 0.82 < x < 0.94 composition range. The obtaining of strained multilayer heterostructures with layer thickness 1-x-ySb_xBi_y/InSb_1-yBi_y/InSb multilayer heterostructures with epilayer thicknesses from 0.05 to 0.2 micrometers depending on growth conditions can be successfully obtained by LPE.

Citation Download Citation

Rauf Kh. Akchurin, V. A. Zhegalin, T. V. Sakharova, and S. V. Seregin "Epitaxial structures based on narrow band-gap InAs_1-x-ySb_xBi_y solid solutions", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280459

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