Paper
20 May 2004 Collimated laser-plasma lithography (CPL) for 90-nm and smaller contacts and vias
Richard Forber, Celestino Gaeta, Heinz Siegert, Scott McLeod, Brent Edward Boerger
Author Affiliations +
Abstract
Collimated laser-Plasma Lithography (CPL) offers potential to match Next Generation Lithography (NGL) needs, ending a pursuit of ever-larger lens NA and ever-smaller k1 process resolution factor. Powered by a laser-produced plasma (LPP) source at 1nm, it capitalizes on mature development of x-ray lithography, which is the only NGL that has produced working chips. JMAR is upgrading its CPL system to increase overall throughput (system power) and is focusing on solving a known industry problem for which CPL presents an advantage: printing sub-90nm contacts in memory chips. The paper will discuss CPL system characteristics and performance. Supporting information on the upgrades to the laser and x-ray generator will be included. Specific resists and mask techniques and the roadmap leading to multi-generational support capability down to the 45nm node will be described.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard Forber, Celestino Gaeta, Heinz Siegert, Scott McLeod, and Brent Edward Boerger "Collimated laser-plasma lithography (CPL) for 90-nm and smaller contacts and vias", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); https://doi.org/10.1117/12.534379
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Cited by 1 scholarly publication.
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KEYWORDS
X-rays

Photomasks

Lithography

X-ray lithography

Collimators

Amplifiers

Collimation

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