Recent progress of LEEPL mask technology

Hiroshi Nozue; Akira Yoshida; Akihiro Endo

doi:10.1117/12.535278

20 May 2004 Recent progress of LEEPL mask technology

Hiroshi Nozue, Akira Yoshida, Akihiro Endo

Proceedings Volume 5374, Emerging Lithographic Technologies VIII; (2004) https://doi.org/10.1117/12.535278
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

LEEPL mask specifications for LEEPL volume production tool "EBPrinter LEEPL-3000" have been fixed and 1X LEEPL stencil masks for 65nm node device fabrication have been developed and evaluated. "EBPrinter LEEPL-3000" handles a 6025 type mask which is compatible with a 6025 photo mask and a 200 mm wafer type mask. Both of masks have silicon based membranes with a thickness of 0.5 μm - 2.0 μm. Exposure field size of "EBPrinter LEEPL-3000" is 46mmX46mm, and pattern area of the LEEPL mask is the same which covers four fields of an optical stepper and a filed of an optical scanner. Obtaining small patterns, high CD accuracy and high image placement (IP) accuracy are very important for a 1X mask. Less than 70 nm patterns with a CD accuracy of 6.9 nm were obtained. As "EBPrinter LEEPL-3000" has a mask global IP error correction function using a sub-deflector, specification of IP error is not so critical. Spedification of global IP error is less than 30 nm, and local IP error is less than 10 nm. Those are easily obtained with membrane stress control and a multiple exposure method of electron beam mask exposure systems.

Citation Download Citation

Hiroshi Nozue, Akira Yoshida, and Akihiro Endo "Recent progress of LEEPL mask technology", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); https://doi.org/10.1117/12.535278

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