157-nm single-layer resist based on novel monocyclic fluorinated polymer

Akihiko Otoguro; Shigeo Irie; Toshiro Itani; Kiyoshi Fujii; Yoko Takebe; Yasuhide Kawaguchi; Osamu Yokokoji

doi:10.1117/12.535013

14 May 2004 157-nm single-layer resist based on novel monocyclic fluorinated polymer

Akihiko Otoguro, Shigeo Irie, Toshiro Itani, Kiyoshi Fujii, Yoko Takebe, Yasuhide Kawaguchi, Osamu Yokokoji

Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.535013
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

Fluorinated polymers are key materials for single-layer resists used in 157-nm lithography. We have been studying fluorinated polymers to determine their potential for use as the base resin and have developed a new monocyclic fluorinated polymer that has high transmittance (an absorption coefficient of 0.1 μm^-1) at a 157-nm exposure wavelength and high dry-etching resistance (a dry-etching rate of 1.86 times that of a KrF resist) under hard mask dry-etching conditions. Moreover, it has a high dissolution rate in standard aqueous tetramethylammoniumhydroxide developer (a dissolution rate of more than 600 nm/s). Using this polymer with adamanthylmethoxymethyl as a protecting group, we were able to resolve a 60-nm line-and-space pattern using a 0.90 numerical aperture 157-nm laser micro-stepper along with a resolution-enhancement alternating phase-shift mask technique. This polymer has enabled both high dry-etching resistance (a dry-etching rate equal to 1.43 times that of a KrF resist) and good imaging performance.

Citation Download Citation

Akihiko Otoguro, Shigeo Irie, Toshiro Itani, Kiyoshi Fujii, Yoko Takebe, Yasuhide Kawaguchi, and Osamu Yokokoji "157-nm single-layer resist based on novel monocyclic fluorinated polymer", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.535013

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