Isomer-pure synthesis and preparation of FET using thieno[<i>f</i>,<i>f</i>']bis[1]benzothiophene (syn, anti)

Brigitte Wex; Bilal R. Kaafarani; Raoul Schroeder; Leszek A. Majewski; Martin Grell; Douglas C. Neckers

doi:10.1117/12.613111

22 September 2005 Isomer-pure synthesis and preparation of FET using thieno[f,f']bis[1]benzothiophene (syn, anti)

Brigitte Wex, Bilal R. Kaafarani, Raoul Schroeder, Leszek A. Majewski, Martin Grell, Douglas C. Neckers

Proceedings Volume 5940, Organic Field-Effect Transistors IV; 594004 (2005) https://doi.org/10.1117/12.613111
Event: Optics and Photonics 2005, 2005, San Diego, California, United States

Abstract

The field-effect mobility in two isomers of thieno[f,f']bis[1]benzothiophene was studied as a function of structure. Both regioisomers exhibit substantial mobilities up to 0.12 cm²/Vs, a value that is at most one order of magnitude lower than the best known organic transistors based on silicon dioxide gate insulators. The devices based on these materials exhibit another phenomenon, namely a shift in the threshold voltage during operation. This shift differs from usually observed threshold voltage changes in amount and irreversibility. In this paper, we present possible explanations for the observed behavior.

Citation Download Citation

Brigitte Wex, Bilal R. Kaafarani, Raoul Schroeder, Leszek A. Majewski, Martin Grell, and Douglas C. Neckers "Isomer-pure synthesis and preparation of FET using thieno[f,f']bis[1]benzothiophene (syn, anti)", Proc. SPIE 5940, Organic Field-Effect Transistors IV, 594004 (22 September 2005); https://doi.org/10.1117/12.613111

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