A novel method for characterizing resist performance

D. Van Steenwinckel; R. Gronheid; J. H. Lammers; A. M. Meyers; F. Van Roey; P. Willems

doi:10.1117/12.712861

21 March 2007 A novel method for characterizing resist performance

D. Van Steenwinckel, R. Gronheid, J. H. Lammers, A. M. Meyers, F. Van Roey, P. Willems

Proceedings Volume 6519, Advances in Resist Materials and Processing Technology XXIV; 65190V (2007) https://doi.org/10.1117/12.712861
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

In this paper, the use of a single Figure-of-Merit to judge resist performance with respect to line width roughness, resolution and sizing dose is proposed and evaluated. Chemically amplified photoresists used in advanced lithography nodes need to fulfill stringent requirements for a considerable number of resist and process characteristics. Along with resolution, line width roughness and resist sensitivity are important examples where the specifications have become very tight. Previously, it has been shown that resolution, line width roughness and resist sensitivity are fundamentally interdependent. Hence, when evaluating or optimizing resist performance it is very important to take these three characteristics into consideration simultaneously. We propose to combine these characteristics in a single photoresist Figure of Merit K_LUP. This Figure of Merit, which is determined from sizing dose, imaging wavelength, exposure latitude, acid diffusion length, line width roughness and pitch allows for a direct comparison of very different resist formulations independent of the exposure tool used. Thus, K_LUP has great potential to assist in evaluating resist performance for the next lithography nodes, for both ArF and for EUV wavelengths.

Citation Download Citation

D. Van Steenwinckel, R. Gronheid, J. H. Lammers, A. M. Meyers, F. Van Roey, and P. Willems "A novel method for characterizing resist performance", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65190V (21 March 2007); https://doi.org/10.1117/12.712861

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