Study on photochemical analysis system for EUV lithography

A. Sekiguchi; Y. Kono; M. Kadoi; Y. Minami; T. Kozawa; S. Tagawa; D. Gustafson; P. Blackborow

doi:10.1117/12.710516

12 April 2007 Study on photochemical analysis system (VLES) for EUV lithography

A. Sekiguchi, Y. Kono, M. Kadoi, Y. Minami, T. Kozawa, S. Tagawa, D. Gustafson, P. Blackborow

Proceedings Volume 6519, Advances in Resist Materials and Processing Technology XXIV; 651946 (2007) https://doi.org/10.1117/12.710516
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

A system for photo-chemical analysis of EUV lithography processes has been developed. This system has consists of 3 units: (1) an exposure that uses the Z-Pinch (Energetiq Tech.) EUV Light source (DPP) to carry out a flood exposure, (2) a measurement system RDA (Litho Tech Japan) for the development rate of photo-resists, and (3) a simulation unit that utilizes PROLITH (KLA-Tencor) to calculate the resist profiles and process latitude using the measured development rate data. With this system, preliminary evaluation of the performance of EUV lithography can be performed without any lithography tool (Stepper and Scanner system) that is capable of imaging and alignment. Profiles for 32 nm line and space pattern are simulated for the EUV resist (Posi-2 resist by TOK) by using VLES that hat has sensitivity at the 13.5nm wavelength. The simulation successfully predicts the resist behavior. Thus it is confirmed that the system enables efficient evaluation of the performance of EUV lithography processes.

Citation Download Citation

A. Sekiguchi, Y. Kono, M. Kadoi, Y. Minami, T. Kozawa, S. Tagawa, D. Gustafson, and P. Blackborow "Study on photochemical analysis system (VLES) for EUV lithography", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 651946 (12 April 2007); https://doi.org/10.1117/12.710516

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