Cost-effective pattern inspection system using Xe-Hg lamp in challenge of sub-65-nm node

Won Sun Kim; Jin Hyung Park; Dong-Hoon Chung; Sang-Gyun Woo

doi:10.1117/12.728956

14 May 2007 Cost-effective pattern inspection system using Xe-Hg lamp in challenge of sub-65-nm node

Won Sun Kim, Jin Hyung Park, Dong-Hoon Chung, Sang-Gyun Woo

Proceedings Volume 6607, Photomask and Next-Generation Lithography Mask Technology XIV; 660717 (2007) https://doi.org/10.1117/12.728956
Event: Photomask and Next-Generation Lithography Mask Technology XIV, 2007, Yokohama, Japan

Abstract

The importance of mask pattern inspection is increased as design node shrinks below. The major reason is as follows. Firstly, inspection systems have to enhance sensitivity because the high grade devices are seriously affected from small defects compared with low grades. The other is SRAFs RET masks. In order to inspect SRAF properly, inspection systems need severer conditions such as small pixel size, short wavelength and special algorithms. Therefore, it takes more than 3 hours to inspect a mask and this increasing inspection time is a serious burden in mask making process. Moreover in spite of mask market and its infrastructure, cost of inspection system is too high. In this paper, the advantages of using Xe-Hg lamp instead of a DUV laser are presented. Special defect algorithms get over low sensitivity of lamp optics. We have evaluated performances of the defect inspection system with programmed defect mask and production mask. The inspection system is cost-effective because the optic part is configured by DUV lamp and fiber optic delivery system. The fast scanning speed is enough to charge the inspection capacity in the fabrication line. These features of the system well match with the flexibility of the facility layout in the mask production.

Citation Download Citation

Won Sun Kim, Jin Hyung Park, Dong-Hoon Chung, and Sang-Gyun Woo "Cost-effective pattern inspection system using Xe-Hg lamp in challenge of sub-65-nm node", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 660717 (14 May 2007); https://doi.org/10.1117/12.728956

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