EUV mask substrate flatness improvement by laser irradiation

Kiwamu Takehisa; Jun Kodama; Haruhiko Kusunose

doi:10.1117/12.746537

30 October 2007 EUV mask substrate flatness improvement by laser irradiation

Kiwamu Takehisa, Jun Kodama, Haruhiko Kusunose

Proceedings Volume 6730, Photomask Technology 2007; 67305I (2007) https://doi.org/10.1117/12.746537
Event: SPIE Photomask Technology, 2007, Monterey, California, United States

Abstract

We demonstrate a new technique for improvement of the flatness of the EUV mask substrate by using a pulsed laser. Laser pulses from an ArF excimer laser were focused inside a quartz mask substrate to make spots. Experiments showed that the substrate surface was locally swelled out where spots were formed just beneath the surface without making any damages on the surface. This surface shape control technique can be applied to the final adjustment of the substrate flatness control since no cleaning process is necessary afterward.

Citation Download Citation

Kiwamu Takehisa, Jun Kodama, and Haruhiko Kusunose "EUV mask substrate flatness improvement by laser irradiation", Proc. SPIE 6730, Photomask Technology 2007, 67305I (30 October 2007); https://doi.org/10.1117/12.746537

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