A frequency multiplication technique based on EUV near-field imaging

Yijian Chen; Yashesh Shroff

doi:10.1117/12.2045880

28 March 2014 A frequency multiplication technique based on EUV near-field imaging

Yijian Chen, Yashesh Shroff

Proceedings Volume 9049, Alternative Lithographic Technologies VI; 90490D (2014) https://doi.org/10.1117/12.2045880
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

We present a simulation study of the near-field Extreme Ultraviolet (EUV) imaging technique to break the diffraction limit of conventional lithography for spatial frequency multiplication. Rigorous electromagnetic simulations are performed to investigate the near-field EUV imaging performance and its process capability. An optical index, depth of thickness fluctuation (DOT) is defined to characterize the tolerable variation of the imaging-layer thickness, which plays a key role in evaluating the feasibility of this lithography technology. High sensitivity of the near-field image (profile and amplitude) to both absorber CD and propagation depth is found in transverse-electric (TE) and transverse-magnetic (TM) illumination modes. Despite the attractive prospect of applying this near-field imaging technique for semiconductor manufacturing, technical challenges from its optical performance and process control are non-trivial.

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Yijian Chen and Yashesh Shroff "A frequency multiplication technique based on EUV near-field imaging", Proc. SPIE 9049, Alternative Lithographic Technologies VI, 90490D (28 March 2014); https://doi.org/10.1117/12.2045880

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KEYWORDS

Near field

Extreme ultraviolet

Lithography

Near field optics

Tin

Extreme ultraviolet lithography

Photomasks

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