Measurement of the phase defect size using scanning probe microscope and at-wavelength inspection tool

Tsuyoshi Amano; Tsukasa Abe

doi:10.1117/12.2083186

13 March 2015 Measurement of the phase defect size using scanning probe microscope and at-wavelength inspection tool

Tsuyoshi Amano, Tsukasa Abe

Proceedings Volume 9422, Extreme Ultraviolet (EUV) Lithography VI; 94221Z (2015) https://doi.org/10.1117/12.2083186
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

Predicting the lithographic impact of a phase defect, that is embedded in an Extreme Ultraviolet (EUV) mask, on a wafer printed image is one of the most challenging tasks. In this study, to characterize the phase defects, two types of measurement tools were employed and the data thus obtained from them were then evaluated for comparisons. One measurement tool was a scanning probe microscope used for measuring the surface topography of phase defects, and the other one was an at-wavelength dark-field inspection tool capable of capturing phase defect and then calculating the defect detection signal intensity (DSI) from those images. A programmed phase defect mask with various lateral sizes and depths was prepared. The sizes and DSIs were then measured. The measured data indicated that the DSIs did not directly correlate with the phase defect volumes. The influence of the phase defects on a wafer printed images was also calculated using a lithography simulator. The calculated results indicated that the printed critical dimensions (CDs) were strongly correlated with the DSIs rather than with the phase defect volumes. As a result, the influence of the phase defect on the printed CD can be predicted from the values of the DSIs.

Citation Download Citation

Tsuyoshi Amano and Tsukasa Abe "Measurement of the phase defect size using scanning probe microscope and at-wavelength inspection tool", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94221Z (13 March 2015); https://doi.org/10.1117/12.2083186

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KEYWORDS

Critical dimension metrology

Extreme ultraviolet

Photomasks

Semiconducting wafers

Phase measurement

Lithography

Quartz

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