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14 September 2017 External cavity cascade diode lasers tunable from 3.05 to 3.25  μm
Meng Wang, Takashi Hosoda, Leon Shterengas, Gela Kipshidze, Ming Lu, Aaron Stein, Gregory Belenky
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Optical Engineering, Vol. 57, Issue 1, 011012 (September 2017). https://doi.org/10.1117/1.OE.57.1.011012
Abstract
The external cavity tunable mid-infrared emitters based on Littrow configuration and utilizing three stages type-I quantum well cascade diode laser gain elements were designed and fabricated. The free-standing coated 7.5-μm-wide ridge waveguide lasers generated more than 30 mW of continuous wave power near 3.25  μm at 20°C when mounted epi-side-up on copper blocks. The external cavity lasers (ECLs) utilized 2-mm-long gain chips with straight ridge design and anti-/neutral-reflection coated facets. The ECLs demonstrated narrow spectrum tunable operation with several milliwatts of output power in spectral region from 3.05 to 3.25  μm corresponding to ∼25  meV of tuning range.
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2017/$25.00 © 2017 SPIE
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Meng Wang, Takashi Hosoda, Leon Shterengas, Gela Kipshidze, Ming Lu, Aaron Stein, and Gregory Belenky "External cavity cascade diode lasers tunable from 3.05 to 3.25  μm," Optical Engineering 57(1), 011012 (14 September 2017). https://doi.org/10.1117/1.OE.57.1.011012
Received: 30 May 2017; Accepted: 24 August 2017; Published: 14 September 2017
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KEYWORDS
Semiconductor lasers
Laser damage threshold
Quantum wells
Quantum cascade lasers
Reflectivity
Aluminum
Heterojunctions
CHORUS Article. This article was made freely available starting 14 September 2018
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