Dr. Gregory R. Savich Profile

Dr. Gregory R. Savich

Professor at Monroe Community College

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Publications (10)

Proceedings Article | 16 October 2019 Paper

Resonant cavity enhanced photodetectors for the mid-wave infrared

A. Craig, T. Golding, G. Savich, G. Wicks, A. Marshall

Proceedings Volume 11163, 1116309 (2019) https://doi.org/10.1117/12.2536900

KEYWORDS: Sensors, Photodetectors, Laser sintering, Mirrors, Quantum efficiency, Mid-IR, Gallium antimonide, Indium arsenide, Absorption, Diodes

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Proceedings Article | 7 May 2019 Paper

Mid-wavelength infrared resonant cavity enhanced photodiodes for infrared spectroscopic sensing of chemicals and other narrow-band optical signals

G. Savich, G. Wicks, K. Jamison, L. Fredin, T. Golding, M. Carmichael, J. Reilly, A. Craig, F. Al-Saymari, A. Marshall

Proceedings Volume 11002, 110021U (2019) https://doi.org/10.1117/12.2523357

KEYWORDS: Sensors, Mirrors, Optical resonators, Mid-IR, Infrared sensors, Photodiodes, Reflectivity, Infrared detectors, Quantum efficiency, Signal to noise ratio

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Proceedings Article | 16 May 2017 Presentation + Paper

Effects of epitaxial structure and processing on electrical characteristics of InAs-based nBn infrared detectors

X. Du, G. Savich, B. Marozas, G. Wicks

Proceedings Volume 10177, 101771Q (2017) https://doi.org/10.1117/12.2262928

KEYWORDS: Temperature metrology, Measurement devices, Failure analysis, Etching, Diffusion, Sensors, Infrared detectors, Infrared sensors, Indium arsenide, Mid-IR, Infrared photography, Infrared radiation, Photodetectors

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Proceedings Article | 1 September 2015 Paper

Surface conduction in InAs and GaSb

D. Sidor, G. Savich, G. Wicks

Proceedings Volume 9616, 96160U (2015) https://doi.org/10.1117/12.2188878

KEYWORDS: Indium arsenide, Gallium antimonide, Semiconductors, Lanthanum, Metals, Photodetectors, Superlattices, Sensors, Semiconductor materials, Gallium arsenide

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Proceedings Article | 8 February 2015 Paper

Extended-shortwave infrared unipolar barrier detectors

G. Wicks, T. Golding, Manish Jain, G. Savich, D. Sidor, X. Du, M. Debnath, T. Mishima, M. Santos

Proceedings Volume 9370, 937023 (2015) https://doi.org/10.1117/12.2083861

KEYWORDS: Sensors, Photodiodes, Indium gallium arsenide, Short wave infrared radiation, Indium gallium arsenide antimonide, Mid-IR, Diffusion, Temperature metrology, Infrared detectors, Gallium antimonide

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The e-SWIR wavelength band is a performance gap for infrared detectors. At both shorter and longer wavelengths, high performance detector technologies exist: SWIR InGaAs detectors (1.7 micron cutoff), and MWIR (3-5 micron) detectors such as InAs-based and GaSb-based Unipolar Barriers, MCT, and InSb. This work discusses development of high performance e-SWIR detectors with cutoff wavelengths in the 2.7 - 2.8 micron range. Two approaches for e-SWIR detector absorber materials were evaluated, lengthening the wavelength response of the SWIR InGaAs technology and shortening the wavelength response of MWIR GaSb-based technology. The InGaAs e- SWIR approach employs mismatched InGaAs absorber layers on InP substrates, using graded AlInAs buffer layers. The GaSb-based approach uses lattice-matched InGaAsSb absorber layers on GaSb substrates. Additionally, two device architectures were examined, pn-based photodiodes and unipolar barrier photodiodes. For both of the absorber materials, the unipolar barrier device architecture was found to be superior. The unipolar barrier device architecture enables both types of device to be free of effects of surface leakage currents and generation-recombination dark currents. InGaAsSb-based devices show excellent performance, with diffusion-limited dark current within a factor of 2-4 of the HgCdTe standard, Rule 07. They achieve background-limited (BLIP) performance at T=210K, which is accessible by thermo-electric coolers. As expected, defects associated with latticemismatch increase dark currents of the InP-based approach. The dark currents of the mismatched unipolar barrier photodiodes are 30x larger than those of the lattice-matched GaSb approach, however despite the defects, the devices still exhibit diffusion-limited operation, and achieve BLIP operation at T=190K Further improvements in the InP-based approach are expected with refinements in the epitaxial structures. Both types of detector approaches are excellent alternatives to conventional e-SWIR detectors.

Proceedings Article | 17 September 2014 Paper

Effect of defects on III-V MWIR nBn detector performance

G. Savich, D. Sidor, X. Du, C. Morath, V. Cowan, G. Wicks

Proceedings Volume 9226, 92260R (2014) https://doi.org/10.1117/12.2064229

KEYWORDS: Diffusion, Sensors, Mid-IR, Photodiodes, Sensor performance, Semiconductors, Indium arsenide, Photodetectors, Infrared detectors, Infrared sensors

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Proceedings Article | 24 June 2014 Paper

G. Savich, D. Sidor, X. Du, M. Jain, C. Morath, V. Cowan, J. Kim, J. Klem, D. Leonhardt, S. Hawkins, T. Fortune, A. Tauke-Pedretti, G. Wicks

Proceedings Volume 9070, 907011 (2014) https://doi.org/10.1117/12.2050535

KEYWORDS: Sensors, Photodiodes, Indium arsenide, Mid-IR, Gallium arsenide, Radiation effects, Photodetectors, Temperature metrology, Crystals, Semiconductors

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Proceedings Article | 21 May 2011 Paper

Use of unipolar barriers to block dark currents in infrared detectors

G. Savich, J. Pedrazzani, D. Sidor, S. Maimon, G. Wicks

Proceedings Volume 8012, 80122T (2011) https://doi.org/10.1117/12.884075

KEYWORDS: Photodiodes, Diffusion, Sensors, Indium arsenide, Infrared detectors, Infrared radiation, Infrared photography, Photodetectors, Metals, Temperature metrology

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Proceedings Article | 23 January 2010 Paper

Infrared detector epitaxial designs for suppression of surface leakage current

G. Wicks, G. Savich, J. Pedrazzani, S. Maimon

Proceedings Volume 7608, 760822 (2010) https://doi.org/10.1117/12.842427

KEYWORDS: Indium arsenide, Photodiodes, Photodetectors, Sensors, Semiconductors, Diffusion, Infrared detectors, Staring arrays, Infrared radiation, Neodymium

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Proceedings Article | 28 February 2006 Paper

A novel free-space optical interconnect employing vertical-cavity surface emitting laser diodes and InGaAs metal-semiconductor-metal photodetectors for Gbit/s RF/microwave systems

Gregory Savich, Rainee Simons

Proceedings Volume 6126, 61260B (2006) https://doi.org/10.1117/12.641734

KEYWORDS: Photodetectors, Diodes, Vertical cavity surface emitting lasers, Sensors, Optical interconnects, Semiconducting wafers, Indium gallium arsenide, Gold, Semiconductor lasers, Optical instrument design

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Showing 5 of 10 publications

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