Watt-class semiconductor optical amplifiers (SOAs) at 1550nm are an attractive alternative to replace erbium-doped fiber amplifiers (EDFAs) in various applications including free space optical communications (FSO), with the potential to be more efficient, compact, and cost-effective while providing high-power diffraction-limited output. We present a single mode fiber-coupled packaged SOA delivering >30dBm (1.2W) of continuous wave ex-fiber power at 1550nm with 16dB of overall gain, enabled by recent advancements in diffraction-limited output from tapered semiconductor amplifiers. Preliminary data communications measurements are presented, with an open eye diagram achieved with >1W of output power at 10Gbps using the differential phase shift keying (DPSK) communications format. Watt-class collimated and fiber-coupled SOAs are available and being shipped to customers now.
High brightness semiconductor diode lasers can provide tremendous system-level advantages for many applications. Recent advancements in InP-based edge-emitting diode lasers operating in the 1500 – 1600 nm wavelength band could enable compact, direct diode solutions with performance metrics that previously could only be met by fiber-based lasers or solid-state laser systems. We report on high power, high beam quality diode lasers at 1550 nm based on a tapered chip architecture. We have demonstrated ⪆5 W of continuous wave output power at room temperature, with a slow axis beam propagation factor M2 of 1.1, corresponding to a slow axis linear brightness of 9.2 W mm-1 mrad-1. We have also demonstrated a fully packaged watt-class single mode fiber-coupled Semiconductor Optical Amplifier (SOA) based on this technology. This package delivers ⪆30 dBm (1.2 W) ex-fiber saturation output power, ten times higher saturation power than the prior state-of-the-art. This result is achieved with an input seed power of 30 mW (approximately 15 dBm), corresponding to an overall gain of approximately 16 dB. To demonstrate the functionality of the SOA, we have carried out linewidth measurements and data transmission measurements. These tapered lasers and amplifiers offer great potential benefit for many pumping and direct use applications.
Watt-class semiconductor optical amplifiers (SOAs) at 1550 nm are an attractive alternative to replace erbium-doped fiber amplifiers (EDFAs) in various applications including remote sensing, optical communications, illumination, and LIDAR, with the potential to be more efficient, compact, and cost-effective. We report a world record of a single mode fiber-coupled packaged semiconductor optical amplifier delivering >30 dBm (1.2 W) of continuous wave ex-fiber power at 1550 nm, enabled by recent advancements in diffraction-limited output from tapered diode laser amplifiers. This result is achieved with an input seed power of 30 mW (~15 dBm), corresponding to an overall gain of ~16 dB. Reliability data will be presented for our tapered laser chips, as will progress towards demonstration of high performance SOAs in an optical link. Watt-class SOAs are available and being shipped to customers now.
Q-switched Nd-based lasers are used for a variety of medical and manufacturing applications and require extremely high efficiency and stability from the diode pump, but limited commercially available solutions exist for single spatial mode direct pumping of Nd-based lasers at 885 nm. To satisfy this need, Freedom Photonics has developed ultra-robust watt-class diffraction-limited 885 nm diode lasers.
We are in the process of performing full reliability and lifetime assessments on our watt-class single-mode 885 nm diode lasers. To achieve high reliability, we employ facet passivation methods to protect against catastrophic optical mirror damage (COMD). Additionally, progress on the development of VBG-locked packages will be discussed. These devices may be used as reliable, high efficiency pumps for Nd-doped solid-state lasers.
Watt-class semiconductor optical amplifiers (SOAs) at 1550 nm are an attractive alternative to replace erbium-doped fiber amplifiers (EDFAs) in various applications including remote sensing, optical communications, and LIDAR, with the potential to be more efficient, compact, and cost-effective. We report a world record of a single mode fiber-coupled packaged semiconductor optical amplifier delivering >30 dBm (1.2 W) of continuous wave ex-fiber power at 1550 nm, enabled by recent advancements in diffraction-limited output from tapered diode laser amplifiers. This result is achieved with an input seed power of 30 mW (~15 dBm), corresponding to an overall gain of ~16 dB, and the noise figure is calculated to be 5.4 dB. We have begun reliability testing of our tapered laser chips, and we are investing in the productization of these packaged watt-class SOAs.
Broad area diode lasers operate with high power and efficiency but suffer from poor beam quality. Diffraction-limited lasers with equivalent power offer a disruptive alternative for applications ranging from fiber laser pumping to automotive LIDAR. We report >9 W continuous output power with 50% EO from tapered diode lasers at 885 and 980 nm, and >3 W power with 25% EO at 1550 nm. We show for the first time that beam quality degradation with increasing injection is completely mitigated and maintain a slow-axis M^2 of 1.3 from threshold to rollover. These devices achieve an order-of-magnitude increase in brightness over commercially available high power diode lasers.
Broad area diode lasers operate with high power and efficiency but suffer from poor beam quality. Diffraction-limited lasers with equivalent power offer a disruptive alternative for applications ranging from fiber laser pumping to automotive LIDAR. We report >9 W continuous output power with 50% E/O from tapered diode lasers at 885 and 980 nm. We show for the first time that beam quality degradation with increasing injection is completely mitigated and maintain a slow-axis M^2 of 1.3 from threshold to rollover. These devices are suitable for use as the building block of geometrical, spectral, and coherent beam combined arrays.
KEYWORDS: Diodes, Semiconductor lasers, Directed energy weapons, Laser systems engineering, Solid state lasers, Solid state electronics, Semiconductors, Prototyping, Photonics, Laser energy
Recent advancements in diffraction-limited output from tapered diode laser amplifiers represent a disruptive technology breakthrough that is poised to revolutionize the LIDAR market. Output powers which were previously only achievable using doped fiber, glass, or crystal laser architectures are now possible directly from the semiconductor chip. For example, diffraction-limited an output power of just a few watts at 1550 nm is sufficient for continuous wave frequency modulated (FMCW) automotive LIDAR. We report here a new world record of >3.0 W output power with nearly diffraction-limited beam quality (M^2 ~1.2) from a 1550 nm tapered diode laser amplifier; this source is suitable for direct use in numerous LIDAR and remote sensing applications.
Q-switched Nd-based lasers are used for a variety of medical and manufacturing applications and benefit from a high efficiency and stable diode pump, but limited commercially available solutions exist for single spatial mode direct pumping of Nd-based lasers at 885 nm. To satisfy this need, Freedom Photonics has developed ultra-robust watt-class diffractionlimited 885 nm diode lasers. We have demonstrated single-mode 885 nm diode lasers with an output power of <1.8 W (1 W rated) and 49% electricalto-optical efficiency. We employ facet passivation methods to protect against catastrophic optical mirror damage (COMD), and the optical power density we have demonstrated points to an effective facet passivation strategy. These devices may be used as high efficiency pumps for Nd-doped solid-state lasers.
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