III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, a detailed characterization of defect properties and the modeling of the impact of defects on device performance are of fundamental importance. This presentation addresses this issue, by discussing a set of recent case studies on the topic; specifically, we focus on the experimental characterization of defects, and on the modeling of their impact on the electro-optical characteristics of the devices.
Recent reports indicated that the use of an InAlN underlayer (UL) can significantly improve the efficiency of InGaN/GaN quantum well (QW) LEDs. Currently, this result is explained by considering that the UL reduces the density of nonradiative recombination centers in the QWs. However, an experimental proof of the reduction of defects in the QWs is not straightforward. In this paper, we use combined electrical (I-V), optical (L-I), capacitance (C-V), steady-state photocapacitance (SSPC) and light-assisted capacitance-voltage (LCV) measurements to explain why devices with UL have a much higher efficiency than identical LEDs without UL. Specifically, we demonstrated an improvement in both electrical and optical characteristic for the sample with the UL; SSPC measurements revealed a higher concentration of defects in the active region for the sample without the UL (9.2x1015 cm‑3), compared to the sample with UL (0.8x1015 cm-3). In addition, we demonstrated that dominant defects are located near the midgap (EC ≈ 1.8 eV), thus acting as non-radiative recombination centers. Finally, we proposed a model to find the traps distribution in the active region. By comparing model and experimental results, we demonstrate the effectiveness of the UL in blocking the growth of defects in the bulk of the device, preventing their propagation towards the QW. The results presented in this paper give a proof of the effectiveness of the UL in limiting the propagation of defects towards the QWs and an experimental characterization of the related traps.
This work reports on the benefits and promising opportunities offered by white LED hybrid technology, based on a mixing perylene-based dyes in order to obtain a warm white light for frequency-down conversion. In a standard Ce:YAG-based white LED, the white light appears cold due to the weakness of red wavelength components in the emission spectrum. In order to obtain a warmer white, one possible solution is to add a red phosphor to the yellow one to move the chromatic coordinates properly, though the luminous efficiency drastically decreases due to the increased light absorption of the coating layer. It is generally believed that the low efficiency of warm white LEDs is the main issue today for LED-based lighting. Using photoluminescence of Lumogen® F Yellow 083, a perylene-based polymer dye commercialized by BASF, and adding a small quantity of another perylene-based dye, Lumogen® F Red 305 (BASF), we obtained high-efficiency warm white LEDs by yellow and red conversion from a standard 450 nm GaN/InGaN royal blue LED. Different weight proportions of dyes were dissolved in solutions with equal amounts of poly-methyl-methacrylate (PMMA) in ethyl acetate, then the LEDs were dip-coated in each solution and optically characterized. Record values of 8.03 lm of luminous flux and 116.11 lm/W of optical efficiency were achieved. Finally, the effects of both driving current, and pump wavelength on LED performances – such as chromatic coordinates, correlated color temperature, color rendering index (CRI), and optical efficiency – were investigated.
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