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Yingfei Lv
at Shanghai Institute of Technical Physics
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Publications (3)
Proceedings Article | 13 April 2015 Paper
Two methods for characterizing the electrical properties of InAsSb film grown by liquid phase epitaxy
Yingfei Lv, Shuhong Hu, Yonggang Xu, Yang Wang, Guolin Yu, Ning Dai
Proceedings Volume 9522, 952216 (2015) https://doi.org/10.1117/12.2179766
KEYWORDS: Indium arsenide, Liquid phase epitaxy, Chemical mechanical planarization, Antimony, Sapphire, Crystals, Epitaxy, Physics, Indium, Electron transport
Proceedings Article | 13 April 2015 Paper
Surface morphology of LPE-growth GaSb quantum dots
Yang Wang, Shuhong Hu, Yingfei Lv, Ning Dai
Proceedings Volume 9522, 95222X (2015) https://doi.org/10.1117/12.2182638
KEYWORDS: Gallium antimonide, Liquid phase epitaxy, Gallium arsenide, Quantum dots, Atomic force microscopy, Scanning electron microscopy, Physics, Electron microscopes, Luminescence, Measurement devices
Proceedings Article | 15 October 2012 Paper
Single crystalline InAsxSb1-x grown on (100) InSb substrate by liquid phase epitaxy
Changhong Sun, Shuhong Hu, Qiwei Wang, Feng Qiu, Yingfei Lv, Huiyong Deng, Yan Sun, Ning Dai
Proceedings Volume 8419, 84191E (2012) https://doi.org/10.1117/12.975813
KEYWORDS: Crystals, Single crystal X-ray diffraction, FT-IR spectroscopy, Liquid phase epitaxy, Scanning electron microscopy, Phonons, Liquid crystals, Raman scattering, Supercooling, Antimony
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