In extreme ultraviolet lithography (EUVL), underlayers have been introduced to improve process window, stochastic printing failures, LWR and even photo-speed. As a result, studies about chemical and physical interactions at resist-underlayer interface have been reported and appropriate designs of silicon based hardmasks and thin organic underlayers for EUVL have been proposed for recent years. EUV underlayers are required to have not only chemical moieties for EUV specific functions but also proper physical properties. The thickness of underlayer has continuously shrink down to a few nanometers to reduce dry etch burden for effective transfer of small patterned features to substrates. In this paper, we report noticeable property variation of an organic underlayer thin film by confinement effect upon thickness reduction. We investigated the thickness effect on key factors, such as film density, coefficient of thermal expansion (CTE), film Tg and surface energy, and consequent impact on EUVL performance while chemical composition of underlayers were not altered.
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