Blue and green edge-emitting laser diodes and vertical-cavity surface emitting lasers on C-plane GaN substrates

Yoshitaka Nakatsu; Tsuyoshi Hirao; Tomonori Morizumi; Yoji Nagao; Kenichi Terao; Hitoshi Nagai; Shingo Masui; Tomoya Yanamoto; Shin-ichi Nagahama

doi:10.1117/12.2645282

15 March 2023 Blue and green edge-emitting laser diodes and vertical-cavity surface emitting lasers on C-plane GaN substrates

Yoshitaka Nakatsu, Tsuyoshi Hirao, Tomonori Morizumi, Yoji Nagao, Kenichi Terao, Hitoshi Nagai, Shingo Masui, Tomoya Yanamoto, Shin-ichi Nagahama

Author Affiliations +

Proceedings Volume 12421, Gallium Nitride Materials and Devices XVIII; 124210F (2023) https://doi.org/10.1117/12.2645282
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

This paper reports the latest device performance of high-power blue and green edge-emitting Laser Diodes (LDs). The epitaxial layers of LDs were grown by Metal Organic Chemical Vapor Deposition (MOCVD) on C-plane free-standing GaN substrates. And a ridge type structure was formed at the top of p-type layers. Fabricated every LD chip was mounted on a heat sink using a junction down method in a TO-Φ9 mm package. We optimized the epitaxial and the device structures for high efficiency and high optical output power. A new developed 455 nm blue LD showed the optical output power and the voltage of 5.90 W and 3.81 V at the forward current of 3 A under Continuous Wave (CW) operation. The wall-plug efficiency (WPE) of the 455 nm blue LD was 51.6 % at 3 A. This is the highest WPE reported so far. The peak WPE of the 455 nm LD was 52.4 % at the forward current of 2.2 A. And a new developed 525 nm green LD showed the optical output power and the voltage of 1.86 W and 4.12 V at the forward current of 1.9 A under CW operation. The wall-plug efficiency (WPE) of the 525 nm green LD was 23.8 % at 1.9 A. This is the highest WPE reported so far. The peak WPE of the 525 nm LD was 25.9 % at the forward current of 1.1 A.

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Yoshitaka Nakatsu, Tsuyoshi Hirao, Tomonori Morizumi, Yoji Nagao, Kenichi Terao, Hitoshi Nagai, Shingo Masui, Tomoya Yanamoto, and Shin-ichi Nagahama "Blue and green edge-emitting laser diodes and vertical-cavity surface emitting lasers on C-plane GaN substrates", Proc. SPIE 12421, Gallium Nitride Materials and Devices XVIII, 124210F (15 March 2023); https://doi.org/10.1117/12.2645282

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