Establishment of new process technology for EUV lithography

Yuhei Kuwahara; Shinichiro Kawakami; Kanzo Kato; Soichiro Okada; Yuya Kamei; Tomoya Onitsuka; Takashi Yamauchi; Nanoka Miyahara; Congque Dinh; Lior Huli; Satoru Shimura

doi:10.1117/12.2657076

30 April 2023 Establishment of new process technology for EUV lithography

Yuhei Kuwahara, Shinichiro Kawakami, Kanzo Kato, Soichiro Okada, Yuya Kamei, Tomoya Onitsuka, Takashi Yamauchi, Nanoka Miyahara, Congque Dinh, Lior Huli, Satoru Shimura

Author Affiliations +

Proceedings Volume 12498, Advances in Patterning Materials and Processes XL; 124981F (2023) https://doi.org/10.1117/12.2657076
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Conference Poster

Abstract

Resolution, line edge roughness (LER) and sensitivity (RLS) and defectivity are the well-known critical issues of extreme ultraviolet (EUV) lithography. To break the RLS triangle, metal oxide resist (MOR) is a promising candidate. However, further improvement of MOR process is required for high volume manufacturing to maintain low defectivity. In this paper, conventional and new processes for MOR pitch 32 nm line and space (L/S) and 36 nm pillar patterns was investigated. This new process was able to perform good sensitivity without degrading roughness. In addition, further optimization for underlayer and developer process could mitigate pattern collapses. MOR treatment was evaluated as another technique for roughness improvement. At last, bottom scum defect would be reduced by new process.

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Yuhei Kuwahara, Shinichiro Kawakami, Kanzo Kato, Soichiro Okada, Yuya Kamei, Tomoya Onitsuka, Takashi Yamauchi, Nanoka Miyahara, Congque Dinh, Lior Huli, and Satoru Shimura "Establishment of new process technology for EUV lithography", Proc. SPIE 12498, Advances in Patterning Materials and Processes XL, 124981F (30 April 2023); https://doi.org/10.1117/12.2657076

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