Paper
4 May 2005 Applying double exposed sharp tip technique (DEST) to characterize material phenomena in DUV photoresist
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Abstract
Double exposed sharp tip (DEST) is produced by a first exposure of a line and space pattern followed by a second exposure of the same pitch with a rotation of 10 degrees. This results in long tapered fingers that cannot be made using a single exposure. The DEST tip size is on the order of the size of standing waves and can be used to examine the trade-off between resist blur and resolution. Experiments of printing DEST on a variety of substrate materials using both Shipley UV210 and IBM APEX-E resist show that DEST shape varies dramatically depending on the underlying materials. A method of characterizing resist surface phenomena based on interpreting DEST structures has been proposed and tested. STORM-3D simulation studies verify the super sensitivity of DEST to non-Fickian acid diffusion and process condition fluctuations as being 10 times more than that of the critical dimension (CD) of the minimum feature size. These numerical investigations show that DEST is suitable for accurate acid diffusion calibration and process monitoring.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lei Yuan, Seiji Nagahara, and Andrew Neureuther "Applying double exposed sharp tip technique (DEST) to characterize material phenomena in DUV photoresist", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.598944
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KEYWORDS
Diffusion

Silicon

Critical dimension metrology

Coating

Double patterning technology

Printing

Scanning electron microscopy

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