Growth of iron films on silicon: effect of the deposition rate

A. S. Gouralnik; N. G. Galkin; V. I. Ivanov

doi:10.1117/12.779221

13 November 2007 Growth of iron films on silicon: effect of the deposition rate

A. S. Gouralnik, N. G. Galkin, V. I. Ivanov

Proceedings Volume 6423, International Conference on Smart Materials and Nanotechnology in Engineering; 64230F (2007) https://doi.org/10.1117/12.779221
Event: International Conference on Smart Materials and Nanotechnology in Engineering, 2007, Harbin, China

Abstract

Growth and magnetism of thin iron films on the surfaces Si(100), Si(111) and Si(111)-4° are studied by in situ SMOKE and ex-situ AFM methods. Comparison of growth modes for slow and ultra-fast deposition is given. Design of the pulse-type ultra-fast evaporator is described.

Citation Download Citation

A. S. Gouralnik, N. G. Galkin, and V. I. Ivanov "Growth of iron films on silicon: effect of the deposition rate", Proc. SPIE 6423, International Conference on Smart Materials and Nanotechnology in Engineering, 64230F (13 November 2007); https://doi.org/10.1117/12.779221

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