Minimizing poly end cap pull back by application of DFM and advanced etch approaches for 65nm and 45nm technologies

Russell Callahan; Gunter Grasshoff; Stefan Roling; Joseph Shannon; Asuka Nomura; Sarah N. McGowan; Cyrus E. Tabery; Karla Romero

doi:10.1117/12.712161

21 March 2007 Minimizing poly end cap pull back by application of DFM and advanced etch approaches for 65nm and 45nm technologies

Russell Callahan, Gunter Grasshoff, Stefan Roling, Joseph Shannon, Asuka Nomura, Sarah N. McGowan, Cyrus E. Tabery, Karla Romero

Author Affiliations +

Proceedings Volume 6521, Design for Manufacturability through Design-Process Integration; 65211Q (2007) https://doi.org/10.1117/12.712161
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

As feature sizes decrease and the overall design shrinks, it is becoming increasingly difficult to reliably pattern gate line ends, or poly end caps, so that they are able to extend over to the field area without bridging into an adjacent feature. Furthermore, the trimming of the lines during the gate etch process is necessary due to the desire to decrease the poly length. However, the line end is also trimmed while trimming the gate sidewall, often at higher rates than the sidewall itself. This investigation focuses on decreasing the poly line end pullback, defined as the tip of the gate past active, using lithography techniques and advanced etch approaches for the 65 nm and 45 nm nodes.

Citation Download Citation

Russell Callahan, Gunter Grasshoff, Stefan Roling, Joseph Shannon, Asuka Nomura, Sarah N. McGowan, Cyrus E. Tabery, and Karla Romero "Minimizing poly end cap pull back by application of DFM and advanced etch approaches for 65nm and 45nm technologies", Proc. SPIE 6521, Design for Manufacturability through Design-Process Integration, 65211Q (21 March 2007); https://doi.org/10.1117/12.712161

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