Si-mold fabrication for patterned media using high-resolution chemically amplified resist

Masaharu Fukuda; Tsuyoshi Chiba; Mikio Ishikawa; Kimio Itoh; Masaaki Kurihara; Morihisa Hoga

doi:10.1117/12.824262

11 May 2009 Si-mold fabrication for patterned media using high-resolution chemically amplified resist

Masaharu Fukuda, Tsuyoshi Chiba, Mikio Ishikawa, Kimio Itoh, Masaaki Kurihara, Morihisa Hoga

Proceedings Volume 7379, Photomask and Next-Generation Lithography Mask Technology XVI; 73790L (2009) https://doi.org/10.1117/12.824262
Event: Photomask and NGL Mask Technology XVI, 2009, Yokohama, Japan

Abstract

Nanoimprint lithography (NIL) is one promising candidate for fabricating a patterned media to be used in the next generation of hard disk drives. It is expected that the pitch, characterizing the feature size of the media will become as low as 40-50 nm for Discrete-Track Media (DTM) by 2010 and 25 nm for Bit-Patterned Media (BPM) by 2012. Electron beam lithography is usually employed for fabricating the nanoimprint mold used for nanoimprint lithography. ZEP520A, the high-resolution resist that is commonly used for this fabrication has a low throughput; caused by the low sensitivity when used at the high acceleration voltage of 100 kV. To solve this problem, we evaluated a new high-resolution, chemically amplified resist (CAR) developed by TOKYO OHKA KOGYO Co., LTD., that was specifically developed for high resolution, instead of high sensitivity, with over twice the sensitivity of ZEP520A and a resolution of 50 nm pitch or less. A spot-electron beam (EB) writer with an acceleration voltage of 100 kV (100 kV-SB) was employed and the new CAR and ZEP520A were compared for resolution and sensitivity. Results indicated that the new CAR patterns were resolved down to a 48 nm pitch, but were collapsed even at a64 nm pitch. To prevent the collapse, we attempted to optimize the baking conditions and examined the primers as promoters of the adhesion between the resist patterns and the substrate surface. As a result, a resist pattern as low as a 48 nm pitch was obtained. We report on the performance of the new CAR and the fabrication of the Si mold by using the new CAR.

Citation Download Citation

Masaharu Fukuda, Tsuyoshi Chiba, Mikio Ishikawa, Kimio Itoh, Masaaki Kurihara, and Morihisa Hoga "Si-mold fabrication for patterned media using high-resolution chemically amplified resist", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73790L (11 May 2009); https://doi.org/10.1117/12.824262

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