Litho-freeze-litho-etch (LFLE) enabling dual wafer flow coat/develop process and freeze CD tuning bake for >200wph immersion ArF photolithography double patterning

Charles N. Pieczulewski; Craig A. Rosslee

doi:10.1117/12.837221

11 December 2009 Litho-freeze-litho-etch (LFLE) enabling dual wafer flow coat/develop process and freeze CD tuning bake for >200wph immersion ArF photolithography double patterning

Charles N. Pieczulewski, Craig A. Rosslee

Author Affiliations +

Proceedings Volume 7520, Lithography Asia 2009; 75201H (2009) https://doi.org/10.1117/12.837221
Event: SPIE Lithography Asia, 2009, Taipei, Taiwan

Abstract

The SOKUDO DUO track system incorporates a dual-path wafer flow to reduce the burden on the wafer handling unit and enables high-throughput coat/develop/bake processing in-line with semiconductor photolithography exposure (scanner) equipment. Various photolithography-based double patterning process flows were modeled on the SOKUDO DUO system and it was confirmed to be able to process both Litho-Process-Litho-Etch (LPLE)*² and negative-tone develop process wafers at greater than 200 wafer-per-hour (wph) capability for each litho-pass through the in-line exposure tool. In addition, it is demonstrated that Biased Hot Plates (BHP) with "cdTune" software improves litho pattern #1 and litho pattern #2 within wafer CD uniformity. Based primarily on JSR Micro materials for Litho-Freeze- Litho-Etch (LFLE) the coat, develop and bake process CD uniformity improvement results are demonstrated on the SOKUDO RF3S immersion track in-line with ASML XT:1900Gi system at IMEC, Belgium.

Citation Download Citation

Charles N. Pieczulewski and Craig A. Rosslee "Litho-freeze-litho-etch (LFLE) enabling dual wafer flow coat/develop process and freeze CD tuning bake for >200wph immersion ArF photolithography double patterning", Proc. SPIE 7520, Lithography Asia 2009, 75201H (11 December 2009); https://doi.org/10.1117/12.837221

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