Paper
28 April 2011 High-throughput critical dimensions uniformity (CDU) measurement of two-dimensional (2D) structures using scanning electron microscope (SEM) systems
Jennifer Fullam, Carol Boye, Theodorus Standaert, John Gaudiello, Derek Tomlinson, Hong Xiao, Wei Fang, Xu Zhang, Fei Wang, Long Ma, Yan Zhao, Jack Jau
Author Affiliations +
Abstract
In this paper, we tested a novel methodology of measuring critical dimension (CD) uniformity, or CDU, with electron beam (e-beam) hotspot inspection and measurement systems developed by Hermes Microvision, Inc. (HMI). The systems were used to take images of two-dimensional (2D) array patterns and measure CDU values in a custom designated fashion. Because this methodology combined imaging of scanning micro scope (SEM) and CD value averaging over a large array pattern of optical CD, or OCD, it can measure CDU of 2D arrays with high accuracy, high repeatability and high throughput.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jennifer Fullam, Carol Boye, Theodorus Standaert, John Gaudiello, Derek Tomlinson, Hong Xiao, Wei Fang, Xu Zhang, Fei Wang, Long Ma, Yan Zhao, and Jack Jau "High-throughput critical dimensions uniformity (CDU) measurement of two-dimensional (2D) structures using scanning electron microscope (SEM) systems", Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 79710Y (28 April 2011); https://doi.org/10.1117/12.879910
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Critical dimension metrology

Semiconducting wafers

Scanning electron microscopy

Inspection

Electron microscopes

Data acquisition

Defect inspection

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