EUV lithography using water-developable resist material derived from biomass

Satoshi Takei; Akihiro Oshima; Tomoko G. Oyama; Takumi Ichikawa; Atsushi Sekiguchi; Miki Kashiwakura; Takahiro Kozawa; Seiichi Tagawa

doi:10.1117/12.2010643

29 March 2013 EUV lithography using water-developable resist material derived from biomass

Satoshi Takei, Akihiro Oshima, Tomoko G. Oyama, Takumi Ichikawa, Atsushi Sekiguchi, Miki Kashiwakura, Takahiro Kozawa, Seiichi Tagawa

Author Affiliations +

Proceedings Volume 8682, Advances in Resist Materials and Processing Technology XXX; 86821T (2013) https://doi.org/10.1117/12.2010643
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

A water-developable resist material which had specific desired properties such as high sensitivity of 5.0 μC/cm², thermal stability of 160 °C, suitable calculated linear absorption coefficients of 13.5 nm, and acceptable CF₄ etch selectivity was proposed using EB lithography for EUV lithography. A water developable resist material derived from biomass is expected for non-petroleum resources, environmental affair, safety, easiness of handling, and health of the working people, instead of the common developable process of trimethylphenylammonium hydroxide. 100 nm line and 400 nm space patterning images with exposure dose of 5.0 μC/cm² were provided by specific process conditions of EB lithography. The developed trehalose derivatives with hydroxyl groups and EB sensitive groups in the water-developable resist material derived from biomass were applicable to future development of high-sensitive and resolution negative type of water-developable resist material as a novel chemical design.

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Satoshi Takei, Akihiro Oshima, Tomoko G. Oyama, Takumi Ichikawa, Atsushi Sekiguchi, Miki Kashiwakura, Takahiro Kozawa, and Seiichi Tagawa "EUV lithography using water-developable resist material derived from biomass", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86821T (29 March 2013); https://doi.org/10.1117/12.2010643

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