While several leading semiconductor manufacturers are already heavily investing in the development of high-NA EUV technology, there are still some technical challenges to overcome. Photoresists are identified as main drivers to achieve the required ultimate resolution, with the development of new EUV materials being ranked as one of the top priorities to address. Currently, MOR is the primary candidate for patterning at 0.55NA relevant pitches, but stability still must be demonstrated. The aim of this work was to extend the current knowledge about the impact of delay effects on resist stability. The effect of post-coating, post-exposure and post-PEB delay on litho performance were thoroughly analyzed and compared for metal oxide and main-chain scission resist platforms. It has been observed that for both chemistries, track stand-alone processing might be a possible and effective approach to explore towards high-NA, bringing more flexibility and enabling higher throughput.
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