Formation of modern integrated circuits, micro- and nanostructures requires lithography resolution of less than 10 nm. The resolution of e-beam lithography is high enough but its throughput is extremely low. Mechanism of dry e-beam etching of resist has lots in common with chemical amplification of resist. It could be one of possible approaches to improve throughput of e-beam lithography. Dry e-beam etching of resist can provide sensitivity increase by a factor of hundreds. As a result, throughput of the e-beam lithography could be increased dramatically. Some structures obtained by the hybrid e-beam lithography (and exposure doses) are presented. For the simulation of electron tracks in PMMA/Si system “direct” Monte Carlo method is applied. In this method, all the dominant processes (elastic scattering, excitation, ionization and secondary electron generation for E < 20 keV) are simulated separately. The results of the simulation are presented.
Electrical properties of MOS structures based on molecular beam epitaxy formed HfO2/Pr2O3 gate dielectric stacks have been studied by CV, GV and IV characteristics. Electrical properties of the structures with HfO2/Pr2O3 and PEALD HfO2 dielectric layers were compared. Higher gate leakage current and lower interface trap level density in the structure with HfO2/Pr2O3 dielectric layer was observed.
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