Prof. Judy M. Rorison Profile

Prof. Judy M. Rorison

Senior Lecturer at Univ of Bristol

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Author

Publications (21)

Proceedings Article | 20 April 2017 Presentation

Optical gain in GaAsBi-based quantum-well diode lasers (Conference Presentation)

Igor Marko, Christopher Broderick, Shirong Jin, Peter Ludewig, Wolfgang Stolz, Kerstin Volz, Judy Rorison, Eoin O'Reilly, Stephen Sweeney

Proceedings Volume 10123, 1012303 (2017) https://doi.org/10.1117/12.2252053

KEYWORDS: Wafer-level optics, Laser applications, Quantum wells, Semiconductor lasers, Absorption, Bismuth, Laser development, Photons, Active optics, Laser systems engineering

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Proceedings Article | 7 January 2011 Paper

Modelling of the effects of conduction band fluctuations caused by nitrogen clustering in GaInNAs materials

Xiao Sun, Judy Rorison

Proceedings Volume 7987, 79870E (2011) https://doi.org/10.1117/12.889950

KEYWORDS: Quantum wells, Electrons, Photons, Carrier dynamics, Modeling, Nitrogen, Optical amplifiers, Quantum dots, Scattering, Luminescence

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Proceedings Article | 8 May 2008 Paper

Fabrication and characterization of GaInNAs/GaAs semiconductor optical amplifiers

J. Pozo, N. Vogiatzis, O. Ansell, P. Heard, J. Rorison, P. Tuomisto, J. Konttinen, M. Saarinen, C. Peng, J. Viheriälä, T. Leinonen, M. Pessa

Proceedings Volume 6997, 69970C (2008) https://doi.org/10.1117/12.781283

KEYWORDS: Etching, Ion beams, Semiconductor optical amplifiers, Photonic integrated circuits, Coarse wavelength division multiplexing, Quantum wells, Semiconductor lasers, Temperature metrology, Tunable lasers, Iodine

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Proceedings Article | 8 May 2008 Paper

Carrier transport study in GaInNAs material using Monte-Carlo method

Nikolaos Vogiatzis, Ying Ning Qiu, Judy Rorison

Proceedings Volume 6997, 69971V (2008) https://doi.org/10.1117/12.781216

KEYWORDS: Scattering, Nitrogen, Phonons, Acoustics, Monte Carlo methods, Semiconductors, Indium gallium arsenide, Absorption, Chemical species, Crystals

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Proceedings Article | 6 May 2008 Paper

Static and dynamic properties of vertical-cavity surface-emitting semiconductor lasers with incorporated two-dimensional photonic crystals

Pavel Ivanov, Yifei Zhu, Martin Cryan, Peter Heard, Ying-Lung Ho, Judy Rorison

Proceedings Volume 6989, 69890Y (2008) https://doi.org/10.1117/12.783838

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Etching, Photonic crystals, Annealing, Waveguides, Optical microcavities, Semiconductor lasers, Oxides, Ion beams

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Proceedings Article | 14 April 2006 Paper

Numerical investigations of dynamical and static characteristics of vertical-cavity surface-emitting lasers incorporating two-dimensional photonic crystal

P. Ivanov, J. Rorison, M. Cryan, M. Dragas

Proceedings Volume 6184, 618420 (2006) https://doi.org/10.1117/12.663150

KEYWORDS: Vertical cavity surface emitting lasers, Waveguides, Refractive index, Photonic crystals, Oxides, Mirrors, Semiconductor lasers, Modulation, Semiconductors, Reflectivity

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Proceedings Article | 14 April 2006 Paper

Improvements in GaInNAs/GaAs quantum-well lasers using focused ion beam post-processing

J. Pozo, J. Hu, J. Rorison, M. Saarinen, J. Konttinen, J. Viheriälä, P. Leinonen, T. Jouhti, M. Pessa

Proceedings Volume 6184, 61840B (2006) https://doi.org/10.1117/12.663325

KEYWORDS: Modulation, Ion beams, Waveguides, Temperature metrology, Quantum wells, Semiconductor lasers, Optical design, Laser processing, Metals, Waveguide lasers

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Proceedings Article | 6 December 2005 Paper

Modelling of a 2R regenerator based on a photonic crystal waveguide pulse reshaper integrated with a SOA

T. Cao, M. Cryan, P. Ivanov, I. Craddock, S. Yu, J. Rorison, C. Railton, J.-Z. Zhang, I. Galbraith, T. Karle

Proceedings Volume 6020, 60200Z (2005) https://doi.org/10.1117/12.636828

KEYWORDS: Waveguides, Finite-difference time-domain method, Dispersion, Modeling, Photonic crystals, Wave propagation, Fiber Bragg gratings, Systems modeling, Physics, Semiconductor lasers

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Proceedings Article | 7 July 2005 Paper

Investigation on the high speed modulation in (GaIn)(NAs)/GaAs lasers

J. Pozo, Y. Qiu, P. Ivanov, P. Yu, J. Rorison, M. Saarinen, J. Konttinen, T. Jouhti, M. Pessa

Proceedings Volume 5840, (2005) https://doi.org/10.1117/12.619150

KEYWORDS: Modulation, Temperature metrology, Semiconductor lasers, Quantum wells, Nitrogen, Laser damage threshold, Eye, Fabry–Perot interferometers, Gallium arsenide, Refractive index

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Proceedings Article | 15 September 2004 Paper

Theoretical and experimental investigation of optical modes in oxide-confined and proton-implanted VCSELs incorporating two-dimensional photonic crystal

Pavel Ivanov, Judy Rorison, Martin Cryan, Milan Dragas

Proceedings Volume 5450, (2004) https://doi.org/10.1117/12.551823

KEYWORDS: Vertical cavity surface emitting lasers, Oxides, Waveguides, Refractive index, Photonic crystals, Etching, Single mode fibers, Wafer-level optics, Mirrors, Modulation

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Proceedings Article | 1 September 2004 Paper

Temperature dependence of carrier dynamics in an inhomogeneous array of quantum dots

Huei Wong, Milan Dragas, G. Ren, Judy Rorison, Mark Hopkinson

Proceedings Volume 5452, (2004) https://doi.org/10.1117/12.545058

KEYWORDS: Carrier dynamics, Quantum dots, Quantum wells, Electrons, Semiconductor lasers, Laser damage threshold, Temperature metrology, Quantum efficiency, Solids, Aluminum

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Proceedings Article | 1 September 2004 Paper

Investigation of optical gain and L-I characteristics in (GaIn)(NAs)/GaAs lasers

Jose Pozo, T. Houle, Judy Rorison, T. Jouhti, Markus Pessa

Proceedings Volume 5452, (2004) https://doi.org/10.1117/12.546474

KEYWORDS: Temperature metrology, Quantum wells, Vertical cavity surface emitting lasers, Nitrogen, Semiconductor lasers, Pulsed laser operation, Indium gallium arsenide, Laser marking, Telecommunications, Laser optics

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GaInNAs quantum well lasers have attracted significant interest in recent years. Their potential for operation at high temperatures without coolers and their application for low cost vertical-cavity surface-emitting lasers (VCSELs) are the main reasons for this interest. The main consequence of adding Nitrogen (N) to InGaAs materials is the band gap shrinkage. The reason for that is the interaction of N (acting as a localized defect) with the conduction band of the InGaAs. In previous studies, low temperature PL measurements of the impact of Nitrogen on the band structure of GaIn NAs have been examined. Pulsed measurements using a broad area GaInNAs QW laser were carried out and the results were analyzed in terms of the interaction of the N defect state with the GaInAs conduction band edge (band-anticrossing model). A detailed experimental temperature study of single quantum-well GaInNAs lasers at room temperature and above has been carried out. Experimental results of L-I, T₀, temperature dependence of lasing wavelength, optical gain and efficiencies are presented, discussed and compared with other materials. The temperature ranges studied is appropriate for most network applications. The gain spectra for moderate densities were experimentally measured using the method of Hakki and Paoli: the 600 μm long devise is biased below threshold and the gain is evaluated form the Fabry Perot modulation of the spontaneous emission spectra. A new concept will be introduced to study the bandwidth of the spectral gain and see its dependence with the temperature. The half-peak-BW will be the bandwidth where the gain decreases 50% from the peak gain. The temperature performance of the half-peak-BW has been studied obtaining a slope of 0.5871 nm/K. About the temperature dependence of the laser, a value of T_o (50 K) similar than the one found in InGaAsP has been found. This might disagree with the first results published of this new material system, giving extremely high values above 100 K. This is due to the high A parameter found in the previous materials. The improvement of the material is decreasing the A parameter and the characteristic temperature of the device. A small temperature dependence of the lasing wavelength was found (0.37 nm/K). This value was confirmed measuring the temperature dependence of the gain peak wavelength. This small temperature dependence can be understood by the interaction of the N state with the conduction band edge.

Proceedings Article | 9 July 2001 Paper

Temperature dependence of threshold current: a better criterion than T0?

Tim Houle, Alexander Onischenko, Judy Rorison, Richard Penty, Ian White, Anthony SpringThorpe, J. Kenton White, Paul Paddon, T. Garanzotis

Proceedings Volume 4283, (2001) https://doi.org/10.1117/12.432571

KEYWORDS: Temperature metrology, Semiconductor lasers, Laser damage threshold, Measurement devices, Phonons, Gallium arsenide, Modeling, Computing systems, Waveguides, Semiconducting wafers

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Proceedings Article | 6 June 2001 Paper

Enhanced-performance operation of InGaN MQW lasers with air/nitride-distributed Bragg reflector defined by focused ion beam etching

Claudio Marinelli, Laurence Sargent, Michal Bordovsky, Adrian Wonfor, Judy Rorison, Richard Penty, Ian White, Peter Heard, Ghulam Hasnain, Richard Schneider

Proceedings Volume 4287, (2001) https://doi.org/10.1117/12.429784

KEYWORDS: Etching, Reflectivity, Near field, Mirrors, Fiber Bragg gratings, Diffraction gratings, Diffraction, Mirror structures, Solids, Indium gallium nitride

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Proceedings Article | 4 May 2001 Paper

In-plane strain modification of polarization behavior of vertical-cavity surface-emitting lasers

Krassimir Panajotov, Bob Nagler, Guy Verschaffelt, Jan Albert, Jan Danckaert, Irina Veretennicoff, Hugo Thienpont, Jennifer Yong, Judy Rorison

Proceedings Volume 4286, (2001) https://doi.org/10.1117/12.424814

KEYWORDS: Polarization, Picosecond phenomena, Vertical cavity surface emitting lasers, Crystals, Anisotropy, Quantum wells, Semiconducting wafers, Switching, Birefringence, Metals

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Proceedings Article | 14 July 2000 Paper

Analysis of the mechanisms for impaired high-temperature high-speed performance of 1.3-um InGaAsP lasers

Aeneas Massara, Kevin Williams, Jennifer Yong, Alexander Onischenko, Judy Rorison, Richard Penty, Ian White, Andrew Galbraith, Paul Crump, Mark Silver

Proceedings Volume 3944, (2000) https://doi.org/10.1117/12.391423

KEYWORDS: Quantum wells, Temperature metrology, Modeling, Heterojunctions, Electrons, Laser damage threshold, Data modeling, Semiconductor lasers, Cladding, Active optics

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Proceedings Article | 1 May 2000 Paper

Polarization pinning of a VCSEL array

Kostas Tastavridis, Kevin Williams, Laurence Sargent, Peter Heard, Judy Rorison, Richard Penty, Ian White

Proceedings Volume 3946, (2000) https://doi.org/10.1117/12.384363

KEYWORDS: Polarization, Etching, Vertical cavity surface emitting lasers, Optical testing, Mineralogy, Polarization control, Ion beams, Gallium, Ions, Particles

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Proceedings Article | 1 May 2000 Paper

Theoretical investigation of the evolution of the transverse modes in vertical-cavity surface-emitting lasers

Kostas Tastavridis, Ian White, Judy Rorison, Richard Penty

Proceedings Volume 3946, (2000) https://doi.org/10.1117/12.384368

KEYWORDS: Vertical cavity surface emitting lasers, Thermal effects, Refractive index, Hole burning spectroscopy, Diffusion, Thermal modeling, Resistance, Mirrors, Lithium, Transparency

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Proceedings Article | 17 April 2000 Paper

Gain switching of GaInN MQW laser diodes

Claudio Marinelli, Igor Khrushchev, Judy Rorison, Richard Penty, Ian White, T. Takeuchi, Hiroshi Amano, Isamu Akasaki, Y. Kaneko, Satoshi Watanabe, Norihide Yamada, Ghulam Hasnain, Richard Schneider, Shih-Yuan Wang, Michael Tan

Proceedings Volume 3938, (2000) https://doi.org/10.1117/12.382817

KEYWORDS: Semiconductor lasers, Ocean optics, Pulsed laser operation, Picosecond phenomena, Quantum wells, Gain switching, Singular optics, Cladding, Signal detection, Quantum efficiency

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Proceedings Article | 29 April 1999 Paper

Analysis of polarization pinning in vertical-cavity surface-emitting lasers using etched trenches

Laurence Sargent, Judy Rorison, Martin Kuball, Richard Penty, Ian White, Peter Heard, Michael Tan, Scott Corzine, Dubravko Babic, Shih-Yuan Wang

Proceedings Volume 3627, (1999) https://doi.org/10.1117/12.347101

KEYWORDS: Etching, Polarization, Annealing, Vertical cavity surface emitting lasers, Raman spectroscopy, Luminescence, Gallium arsenide, Fabry–Perot interferometers, Semiconducting wafers, Modeling

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Proceedings Article | 29 April 1999 Paper

Dual-purpose vertical-cavity optoelectronic components for data communication applications

Milan Dragas, Ian White, Richard Penty, Judy Rorison, Peter Heard, Gareth Parry

Proceedings Volume 3627, (1999) https://doi.org/10.1117/12.347097

KEYWORDS: Vertical cavity surface emitting lasers, Sensors, Etching, Signal detection, Reflectivity, Absorption, Optoelectronic devices, Photodetectors, Mirrors, Data communications

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Showing 5 of 21 publications

Conference Committee Involvement (3)

Semiconductor Lasers and Laser Dynamics II

3 April 2006 | Strasbourg, France

Semiconductor Lasers and Laser Dynamics

27 April 2004 | Strasbourg, France

VCSELs and Optical Interconnects

30 October 2002 | Bruges, Belgium

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