PROCEEDINGS VOLUME 1186
1989 MICROELECTRONIC INTEGRATED PROCESSING CONFERENCES | 10-13 OCTOBER 1989
Surface and Interface Analysis of Microelectronic Materials Processing and Growth
IN THIS VOLUME

0 Sessions, 22 Papers, 0 Presentations
All Papers  (22)
1989 MICROELECTRONIC INTEGRATED PROCESSING CONFERENCES
10-13 October 1989
Santa Clara, United States
All Papers
Proc. SPIE 1186, In situ Characterization Of MBE Grown Surfaces And Interfaces By Grazing Incidence X-Ray Diffraction, 0000 (5 February 1990); doi: 10.1117/12.963911
Proc. SPIE 1186, Process Development And Control Using Total Reflection X-Ray Fluorescence (TXRF) For Surface Analysis, 0000 (5 February 1990); doi: 10.1117/12.963912
Proc. SPIE 1186, High Precision Measurement Of Phosphorus In Thin Glass Films Using X-Ray Fluorescence, 0000 (5 February 1990); doi: 10.1117/12.963913
Proc. SPIE 1186, IN-SITU Monitoring Of OMVPE Of GaAs And Ga1-xAlxAs (x = 0.17) By Contactless Photoreflectance, 0000 (5 February 1990); doi: 10.1117/12.963914
Proc. SPIE 1186, Damage At Reactive Ion Etched MBE Regrown GaAs Interface, 0000 (5 February 1990); doi: 10.1117/12.963915
Proc. SPIE 1186, Investigation Of Photoablation As A Patterning Technique For Silicon Based Integrated Circuits: Laser Ablation And Physical Damage Threshold Considerations, 0000 (5 February 1990); doi: 10.1117/12.963916
Proc. SPIE 1186, Vision Based Instrumentation For Microelectronic Materials Processing, 0000 (5 February 1990); doi: 10.1117/12.963917
Proc. SPIE 1186, IN-SITU Diagnostics For Deposition And Processing Of High Tc Superconducting Thin Films, 0000 (5 February 1990); doi: 10.1117/12.963918
Proc. SPIE 1186, Development Of A Real Time Monitor For Superconductive Thin Film Preparation, 0000 (5 February 1990); doi: 10.1117/12.963919
Proc. SPIE 1186, Application of the Raman Microprobe Mole to the Characterization of Microelectronic Materials and the Analysis of Manufacturing Defects, 0000 (5 February 1990); doi: 10.1117/12.963920
Proc. SPIE 1186, Reflectance-difference spectroscopy of GaAs crystal growth by OMCVD, 0000 (5 February 1990); doi: 10.1117/12.963921
Proc. SPIE 1186, IN SITU Analysis Of The Growth Of Semiconductor Materials By Phase Modulated Ellipsometry From UV To IR, 0000 (5 February 1990); doi: 10.1117/12.963922
Proc. SPIE 1186, Photoreflectance Study Of Strain At Si/SiO2 Interfaces Prepared By Thermal Oxidation Of Silicon, 0000 (5 February 1990); doi: 10.1117/12.963923
Proc. SPIE 1186, Photoelectrochemically Induced Copper Deposition On P-Silicon Electrodes From CuCN Solutions, 0000 (5 February 1990); doi: 10.1117/12.963924
Proc. SPIE 1186, Observations Of Epitaxial Growth Using Scanning Tunneling Microscopy, 0000 (5 February 1990); doi: 10.1117/12.963925
Proc. SPIE 1186, In-situ Characterization Of Impurities And Defects At Si Interfaces, 0000 (5 February 1990); doi: 10.1117/12.963926
Proc. SPIE 1186, Investigation By Transmission Electron Microscopy Of The Al-SiO2 Thin-Film Reaction Induced By in-situ Rapid Thermal Processing, 0000 (5 February 1990); doi: 10.1117/12.963927
Proc. SPIE 1186, In-situ Observation On Electron Beam Induced Chemical Vapor Deposition By Transmission Electron Microscopy, 0000 (5 February 1990); doi: 10.1117/12.963928
Proc. SPIE 1186, Investigation of Copper / Polyimide Interfacial Reactions, 0000 (5 February 1990); doi: 10.1117/12.963929
Proc. SPIE 1186, Three-Dimensional Characterization of LiNbO3 Waveguides By Secondary Ion Mass Spectrometry (SIMS) Image Depth Profiling, 0000 (5 February 1990); doi: 10.1117/12.963930
Proc. SPIE 1186, Study of Titanium Diffusion in Lithium Niobate by Secondary Ion Mass Spectrometry (SIMS) Three Dimensional Profiling, 0000 (5 February 1990); doi: 10.1117/12.963931
Proc. SPIE 1186, Analysis Of Nonlinear Optical Phenomena: Perspective Of in situ Monitoring Method Of The Semiconductor-Film Crystal-Structure, 0000 (5 February 1990); doi: 10.1117/12.963932
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