PROCEEDINGS VOLUME 3001
PHOTONICS WEST '97 | 8-14 FEBRUARY 1997
In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared
IN THIS VOLUME

0 Sessions, 44 Papers, 0 Presentations
Red Lasers  (4)
Novel Lasers  (5)
PHOTONICS WEST '97
8-14 February 1997
San Jose, CA, United States
High-Power Lasers
Proc. SPIE 3001, High-power laser diodes at various wavelengths, 0000 (2 May 1997); doi: 10.1117/12.273775
Proc. SPIE 3001, High-power InGaAs(P)/InGa(Al)P/GaAs semiconductor diode lasers, 0000 (2 May 1997); doi: 10.1117/12.273784
Proc. SPIE 3001, Temperature, stress, disorder, and crystallization effects in laser diodes: measurements and impacts, 0000 (2 May 1997); doi: 10.1117/12.273793
Proc. SPIE 3001, Near-field optical-beam-induced current spectroscopy as a tool for analyzing aging processes in diode lasers, 0000 (2 May 1997); doi: 10.1117/12.273804
High-Brightness Lasers
Proc. SPIE 3001, Curved-grating surface-emitting DFB lasers and arrays, 0000 (2 May 1997); doi: 10.1117/12.273813
Proc. SPIE 3001, Antiphase complex-coupled surface-emitting distributed-feedback diode lasers, 0000 (2 May 1997); doi: 10.1117/12.273816
Proc. SPIE 3001, Filamentation in high-power tapered semiconductor amplifiers, 0000 (2 May 1997); doi: 10.1117/12.273817
Proc. SPIE 3001, High-power 1.3um InGaAsP/InP lasers and amplifiers with tapered gain regions, 0000 (2 May 1997); doi: 10.1117/12.273818
Blue/Green Lasers
Proc. SPIE 3001, Wide-bandgap semiconductor laser: challenges for the future, 0000 (2 May 1997); doi: 10.1117/12.273776
Proc. SPIE 3001, II-VI index-guided lasers for optical recording, 0000 (2 May 1997); doi: 10.1117/12.273777
Proc. SPIE 3001, Coulomb enhancement CdZnSe single quantum well lasers, 0000 (2 May 1997); doi: 10.1117/12.273778
Proc. SPIE 3001, Theory of InGaN multiquantum well laser diodes, 0000 (2 May 1997); doi: 10.1117/12.273779
Red Lasers
Proc. SPIE 3001, Progress in development of a monolithic 680-nm MOPA, 0000 (2 May 1997); doi: 10.1117/12.273780
Proc. SPIE 3001, Optical spectroscopic determination of the electronic band structure of bulk AlGaInP and GaInP-AlGaInP heterojunction band offsets, 0000 (2 May 1997); doi: 10.1117/12.273781
Proc. SPIE 3001, Variation of polarization tilt in GaInP/AlGaInP visible laser diodes, 0000 (2 May 1997); doi: 10.1117/12.273782
Proc. SPIE 3001, AlxGayIn1-x-yAs/AlGaAs quantum well lasers at 670 to 750 nm, 0000 (2 May 1997); doi: 10.1117/12.273783
Novel Lasers
Proc. SPIE 3001, Active (In,Ga)As/GaAs blue-green light emitters, 0000 (2 May 1997); doi: 10.1117/12.273785
Proc. SPIE 3001, Compact GaAs-based second-harmonic generation horizontal cavity surface-emitting blue lasers, 0000 (2 May 1997); doi: 10.1117/12.273786
Proc. SPIE 3001, New approach to blue-shifting asymmetric quantum wells, 0000 (2 May 1997); doi: 10.1117/12.273787
Proc. SPIE 3001, Digital beam steering from surface-emitting laser diodes based on surface mode emission, 0000 (2 May 1997); doi: 10.1117/12.273788
Temperature Sensitivity of Semiconductor Lasers
Proc. SPIE 3001, Uncooled complex-coupled 1.55-um distributed feedback lasers with absorptive gratings, 0000 (2 May 1997); doi: 10.1117/12.273789
Proc. SPIE 3001, Temperature sensitivity of strained multiple quantum well long-wavelength semiconductor lasers: root cause analysis and the effects of varying device structure, 0000 (2 May 1997); doi: 10.1117/12.273790
Proc. SPIE 3001, Performance of ridge-guide AlGaInAs lasers, 0000 (2 May 1997); doi: 10.1117/12.273791
Proc. SPIE 3001, Temperature insensitivity of the Al-free InGaAsP lasers for <lambda> =808 and 980 nm, 0000 (2 May 1997); doi: 10.1117/12.273792
Proc. SPIE 3001, Long-wavelength-range laser diode using GaInNAs, 0000 (2 May 1997); doi: 10.1117/12.273794
Quantum Cascade Lasers
Proc. SPIE 3001, Mid-IR room temperature quantum cascade lasers, 0000 (2 May 1997); doi: 10.1117/12.273795
Proc. SPIE 3001, Intersubband laser design using a quantum box array, 0000 (2 May 1997); doi: 10.1117/12.273796
Proc. SPIE 3001, Quantum cascade light-emitting diodes based on type-II quantum wells, 0000 (2 May 1997); doi: 10.1117/12.273797
Proc. SPIE 3001, Long-wavelength IR interband cascade light-emitting diodes, 0000 (2 May 1997); doi: 10.1117/12.273798
Mid-IR Lasers I
Proc. SPIE 3001, External cavity mid-infrared semiconductor lasers, 0000 (2 May 1997); doi: 10.1117/12.273799
Proc. SPIE 3001, High-temperature mid-IR type-II quantum well lasers, 0000 (2 May 1997); doi: 10.1117/12.273800
Proc. SPIE 3001, 3 to 5-um lasers employing GaInSb/InAs superlattice active layers, 0000 (2 May 1997); doi: 10.1117/12.273801
Proc. SPIE 3001, GaInAsSb/AlGaAsSb diode lasers grown by organometallic vapor phase epitaxy, 0000 (2 May 1997); doi: 10.1117/12.273802
Proc. SPIE 3001, InAsSb-based mid-infrared lasers (3.8 to 3.9 um) and light-emitting diodes with AlAsSb claddings and semimetal electron injection grown by metal-organic chemical vapor deposition, 0000 (2 May 1997); doi: 10.1117/12.273803
Proc. SPIE 3001, Continuous-wave high-power diode lasers for the 3-um wavelengths, 0000 (2 May 1997); doi: 10.1117/12.273805
Proc. SPIE 3001, Suppression of Auger recombination in the diode lasers based on type II InAsSb/InAsSbP and InAs/GaInAsSb heterostructures, 0000 (2 May 1997); doi: 10.1117/12.273806
Proc. SPIE 3001, Theoretical performance of 3 to 4-um compressively strained InAlAsSb QW lasers, 0000 (2 May 1997); doi: 10.1117/12.273807
Telecom Lasers
Proc. SPIE 3001, High-performance 1.3-um GaInAsP/InP tensile-strained quantum well lasers, 0000 (2 May 1997); doi: 10.1117/12.273808
Proc. SPIE 3001, State of the art: widely tunable lasers, 0000 (2 May 1997); doi: 10.1117/12.273809
Proc. SPIE 3001, Effect of wavelength detuning on spectral and temperature characteristics of 1.3-um DFB lasers, 0000 (2 May 1997); doi: 10.1117/12.273810
Proc. SPIE 3001, Uncooled DFB lasers for CATV, 0000 (2 May 1997); doi: 10.1117/12.273811
Proc. SPIE 3001, Partially corrugated waveguide laser diodes for use in CATV networks, 0000 (2 May 1997); doi: 10.1117/12.273812
Novel Lasers
Proc. SPIE 3001, Thermally induced delayed turn-on in thin p-clad lasers, 0000 (2 May 1997); doi: 10.1117/12.273814
High-Brightness Lasers
Proc. SPIE 3001, Lateral-mode selection in phase-locked antiguided arrays via distributed-feedback grating, 0000 (2 May 1997); doi: 10.1117/12.273815
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