Improved hemicellulose spin on carbon hardmask

Kazuyo Morita; Kimiko Yamamoto; Hiroki Tanaka; Yasuaki Tanaka; Masahiko Harumoto; Yuji Tanaka; Chisayo Nakayama; You Arisawa; Tomohiro Motono; Harold Stokes; Masaya Asai; Charles Pieczulewski

doi:10.1117/12.2514915

25 March 2019 Improved hemicellulose spin on carbon hardmask

Kazuyo Morita, Kimiko Yamamoto, Hiroki Tanaka, Yasuaki Tanaka, Masahiko Harumoto, Yuji Tanaka, Chisayo Nakayama, You Arisawa, Tomohiro Motono, Harold Stokes, Masaya Asai, Charles Pieczulewski

Author Affiliations +

Proceedings Volume 10960, Advances in Patterning Materials and Processes XXXVI; 109601A (2019) https://doi.org/10.1117/12.2514915
Event: SPIE Advanced Lithography, 2019, San Jose, California, United States

Abstract

Regarding 3D semiconductor devices, one of difficulties is hardmask process for deep memory holes because of expensive process cost. To overcome this issue, cost effective hardmask process concept using hemicellulose SOC is newly proposed by spin-coat process and improved hardmask technology of hemicellulose SOC (made from bio-based green chemistry material). In this study, deep holes of micron scale were made after under layer RIE using hemicellulose SOC and reactive hemicellulose hardening process (R2H). RIE selectivity was extremely improved up to 65 by optimization of R2H strong process. The results show the feasibility of cost effective deep memory hole process for 3D devices. Additionally, EUV patterns (Hole CD of 24nm and L/S of hp18nm) in under layer were obtained by Hemicellulose SOC and R2H. Its aspect ratio was 15. The fine patterning results show a big potential for next generation memory and logic device processes.

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Kazuyo Morita, Kimiko Yamamoto, Hiroki Tanaka, Yasuaki Tanaka, Masahiko Harumoto, Yuji Tanaka, Chisayo Nakayama, You Arisawa, Tomohiro Motono, Harold Stokes, Masaya Asai, and Charles Pieczulewski "Improved hemicellulose spin on carbon hardmask", Proc. SPIE 10960, Advances in Patterning Materials and Processes XXXVI, 109601A (25 March 2019); https://doi.org/10.1117/12.2514915

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