Identifying trends in photoresist polymer properties to improve line and space defects

Benjamin D. Rafael-Naab; Jong Keun Park; Emad Aqad; Yinjie Cen; Suzanne M. Coley; Li Cui; Conner Hoelzel; Choong Bong Lee; Jason Behnke; Rochelle Rena; Sylvie Eckert; Stefan Alexandrescu; K. A. Niradha Sachinthani; Michael Finch; Karen Petrillo; Li Cheng

doi:10.1117/12.3010493

9 April 2024 Identifying trends in photoresist polymer properties to improve line and space defects

Benjamin D. Rafael-Naab, Jong Keun Park, Emad Aqad, Yinjie Cen, Suzanne M. Coley, Li Cui, Conner Hoelzel, Choong Bong Lee, Jason Behnke, Rochelle Rena, Sylvie Eckert, Stefan Alexandrescu, K. A. Niradha Sachinthani, Michael Finch, Karen Petrillo, Li Cheng

Author Affiliations +

Proceedings Volume 12957, Advances in Patterning Materials and Processes XLI; 129571S (2024) https://doi.org/10.1117/12.3010493
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Conference Poster

Abstract

The drive toward tighter pitch and higher density integrated circuits requires continual advancement in lithography. Advanced photolithography tools use extreme ultraviolet (EUV) light with a wavelength of 13.5nm. The high energy nature of EUV light generates secondary electrons in the photoresist that are responsible for the photochemistry that induces the solubility switch. This distinct mechanism has provided the driving force for the development of new photoresists that are sensitive to EUV and highly reactive toward secondary electrons. Despite the considerable change in acid generation mechanism going from DUV to EUV, chemically amplified photoresists continue to be leading photoresist candidates for new process nodes at low NA EUV (0.33 NA) and their use is expected to extend into early high NA (0.55 NA). Herein the after-developer defects (ADI) and EUV P36 LS trench printing performance of a series of chemically amplified photoresists (CAR) with distinct chemistry developed specifically for EUV lithography are compared. In particular, the relationship of different leaving group chemistries and polymer manufacturing processes on stochastic defectivity is explored as well as the connection to photoresist polymer hydrophobicity and homogeneity. The insights gained from this study guide design strategies for improvement of advanced chemically amplified photoresists for EUV lithography.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

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Benjamin D. Rafael-Naab, Jong Keun Park, Emad Aqad, Yinjie Cen, Suzanne M. Coley, Li Cui, Conner Hoelzel, Choong Bong Lee, Jason Behnke, Rochelle Rena, Sylvie Eckert, Stefan Alexandrescu, K. A. Niradha Sachinthani, Michael Finch, Karen Petrillo, and Li Cheng "Identifying trends in photoresist polymer properties to improve line and space defects", Proc. SPIE 12957, Advances in Patterning Materials and Processes XLI, 129571S (9 April 2024); https://doi.org/10.1117/12.3010493

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