Paper
20 May 2004 Status of EUV micro-exposure capabilities at the ALS using the 0.3-NA MET optic
Patrick Naulleau, Kenneth A. Goldberg, Erik H. Anderson, Kevin Bradley, Rene Delano, Paul Denham, Bob Gunion, Bruce Harteneck, Brian Hoef, Hanjing Huang, Keith Jackson, Gideon Jones, Drew Kemp, James Alexander Liddle, Ron Oort, Al Rawlins, Senajith Rekawa, Farhad Salmassi, Ron Tackaberry, Carl Chung, Layton Hale, Don Phillion, Gary Sommargren, John Taylor
Author Affiliations +
Abstract
The success of recent static printing experiments at Lawrence Berkeley National Laboratory’s Advanced Light Source (ALS) using the EUV LLC Engineering Test Stand (ETS) Set-2 optic has demonstrated the utility of synchrotron-based EUV exposure stations. Although not viable light sources for commercial lithography, synchrotrons provide clean, convenient, and extremely flexible sources for developmental microfield lithography. The great flexibility of synchrotron-based illumination arises from the fact that such sources facilitate active coherence reduction, thus enabling the coherence function, or pupil fill, to be actively sculpted in real time. As the commercialization of EUV progresses, the focus of developmental EUV lithography is shifting from low numerical aperture (NA) tools such as the 0.1-NA ETS to higher-NA tools such as the 0.3-NA Micro Exposure Tool (MET). To support printing with MET optics at the ALS, a new printing station has been developed, relying on a scanning illuminator to provide programmable coherence (pupil-fill) control. The illuminator is designed to operate up to a coherence factor (s) of 1 and support the full 200′600 design printed field of view. In addition to a new illuminator design, new focus sensing and dose-control systems have also been implemented. Here we describe the MET printing capabilities in detail and present preliminary printing results with the Sematech Set-2 MET optic.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patrick Naulleau, Kenneth A. Goldberg, Erik H. Anderson, Kevin Bradley, Rene Delano, Paul Denham, Bob Gunion, Bruce Harteneck, Brian Hoef, Hanjing Huang, Keith Jackson, Gideon Jones, Drew Kemp, James Alexander Liddle, Ron Oort, Al Rawlins, Senajith Rekawa, Farhad Salmassi, Ron Tackaberry, Carl Chung, Layton Hale, Don Phillion, Gary Sommargren, and John Taylor "Status of EUV micro-exposure capabilities at the ALS using the 0.3-NA MET optic", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); https://doi.org/10.1117/12.556538
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KEYWORDS
Reticles

Semiconducting wafers

Sensors

Fiber optic illuminators

Printing

Extreme ultraviolet lithography

Metrology

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