Paper
14 May 2004 Influence of writing strategy on CD control for the spatial-light-modulator-based Sigma7300 DUV laser pattern generator
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Abstract
Critical dimension control is becoming more and more critical in the mask making industry as the exposure wavelength goes down. For laser pattern generators, the move from traditional DNQ/Novolak based towards DUV chemically amplified resist processing was initially troublesome. The relative long total exposure time of pattern generators in contrast to wafer steppers, in combination with thick quartz substrates with relatively low heat capacity, may result in reduced lithographic performance due to excessive diffusion of photogenerated acid. The photoresist polymer architecture play a large role in determining the acid diffusion characteristics and thereby also the image fidelity and resolution. In the Sigma7300 laser pattern generator the image is created by the spatial light modulator, which acts as a reflective computer-controlled reticle. By adopting a proper writing strategy, the negative effects of acid diffusion could be reduced. One component in the Sigma writing strategy is to expose the pattern in several passes that allows for dose compensation as well as averaging schemes to reduce CD errors. By adjusting the dose per pass and by keeping track of the delay times between each shot as well as the exposure path, a better control of the linewidth may be achieved for certain photoresist chemistry. In this study we present results from investigations of AZ DX 1100P and FEP-171 resists using different writing strategies.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hans Fosshaug, Per Askebjer, Johan Karlsson, Adisa Bajramovic, Kezhao Xing, Robert Eklund, Jonathan Walford, Mats Ekberg, Peter Hogfeldt, and Thomas Öström "Influence of writing strategy on CD control for the spatial-light-modulator-based Sigma7300 DUV laser pattern generator", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.535821
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Cited by 2 patents.
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KEYWORDS
Diffusion

Critical dimension metrology

Photomasks

Deep ultraviolet

Polymers

Printing

Spatial light modulators

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