Paper
22 March 2011 Contact patterning strategies for 32nm and 28nm technology
Bradley Morgenfeld, Ian Stobert, Ju j An, Hideki Kanai, Norman Chen, Massud Aminpur, Colin Brodsky, Alan Thomas
Author Affiliations +
Abstract
As 193 nm immersion lithography is extended indefinitely to sustain technology roadmaps, there is increasing pressure to contain escalating lithography costs by identifying patterning solutions that can minimize the use of multiple-pass processes. Contact patterning for the 32/28 nm technology nodes has been greatly facilitated by just-in-time introduction of new process enablers that allow the simultaneous support of flexible foundry-oriented ground rules alongside highperformance technology, while also migrating to a single-pass patterning process. The incorporation of device based performance metrics along with rigorous patterning and structural variability studies were critical in the evaluation of material innovation for improved resolution and CD shrink along with novel data preparation flows utilizing aggressive strategies for SRAF insertion and retargeting.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bradley Morgenfeld, Ian Stobert, Ju j An, Hideki Kanai, Norman Chen, Massud Aminpur, Colin Brodsky, and Alan Thomas "Contact patterning strategies for 32nm and 28nm technology", Proc. SPIE 7973, Optical Microlithography XXIV, 797319 (22 March 2011); https://doi.org/10.1117/12.879773
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Cited by 2 scholarly publications.
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KEYWORDS
Optical lithography

SRAF

Critical dimension metrology

Etching

Semiconducting wafers

Model-based design

Photomasks

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