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Zhi Jiang
at Institute of Semiconductors CAS
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Publications (4)
Proceedings Article | 20 January 2023 Paper
The study on dark current of InAs/GaSb superlattice longwave devices with unipolar graded barrier structure
Tianyu Cao, Youwen Huang, Junbin Li, Jincheng Kong, Xuchang Zhou, Gongrong Deng, Haipeng Wang, Qiusi Peng, Yu Ao, Yingchun Mu, Zhi Jiang, Dongsheng Li
Proceedings Volume 12555, 125550Q (2023) https://doi.org/10.1117/12.2652145
KEYWORDS: Superlattices, Diodes, Temperature metrology, Photodiodes, Infrared detectors, Oxides, Quantum well infrared photodetectors, Interfaces, Electrons, Statistical analysis
Proceedings Article | 14 November 2018 Paper
Mid-/long-wave dual-band infrared focal plane array based on type-II InAs/GaSb superlattice
Proceedings Volume 10826, 108261X (2018) https://doi.org/10.1117/12.2506053
KEYWORDS: Mid-IR, Long wavelength infrared, Superlattices, Sensors, Staring arrays, Quantum efficiency, Infrared radiation, Gallium antimonide, Electrons, Photodiodes
Proceedings Article | 9 November 2018 Paper
Broadband antireflection coating for the near-infrared InAs/GaSb Type-II superlattices photodetectors by lift-off process
Proceedings Volume 10826, 108261Z (2018) https://doi.org/10.1117/12.2509181
KEYWORDS: Antireflective coatings, Photodetectors, Infrared detectors, Superlattices, Sensors, Infrared photography, Infrared radiation, Infrared sensors, Silica, Reflectivity
Proceedings Article | 5 November 2018 Paper
Surface passivation of 1550nm AlxInyAsSb avalanche photodiode
Proceedings Volume 10814, 1081416 (2018) https://doi.org/10.1117/12.2500523
KEYWORDS: Avalanche photodetectors, Dielectrics, Avalanche photodiodes, Silica, Plasma, Aluminum, Capacitance, Etching, Oxides, Gallium antimonide
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