A study of patterning 36nm-pitch logic contact holes in a metal oxide resist using a high-reflectance phase-shifting mask that results in image reversal

Shih-En Tseng; Chun-Kuang Chen; Dong-Seok Nam; Will Lin; Anthony Yen

doi:10.1117/12.2642302

1 December 2022 A study of patterning 36nm-pitch logic contact holes in a metal oxide resist using a high-reflectance phase-shifting mask that results in image reversal

Shih-En Tseng, Chun-Kuang Chen, Dong-Seok Nam, Will Lin, Anthony Yen

Author Affiliations +

Proceedings Volume 12293, Photomask Technology 2022; 122930C (2022) https://doi.org/10.1117/12.2642302
Event: SPIE Photomask Technology + EUV Lithography, 2022, Monterey, California, United States

Abstract

The high-reflectance phase-shifting mask (HR-PSM) is studied for patterning 36nm-pitch logic contact holes and compared with other mask absorbers in terms of imaging performance (ILS, LCDU, MEEF, etc.) and exposure dose. To this end, wafer-data-calibrated EUV resist models for CAR and MOR are used. Our simulation results show that a HRPSM produces dark-field images at large mask CD. However, as mask CD decreases, the tone of the images is reversed and bright-field images of good contrast can be generated. Based on this observation, a HR-PSM plus MOR patterning approach is proposed for through-pitch logic contact hole applications with a minimum pitch equal to 36 nm. We show that this approach demonstrates multiple enhancements in terms of through-pitch performance and enables us to extend the practical resolution of logic contact holes below the pitch of 40 nm using the 0.33NA EUV scanner.

Citation Download Citation

Shih-En Tseng, Chun-Kuang Chen, Dong-Seok Nam, Will Lin, and Anthony Yen "A study of patterning 36nm-pitch logic contact holes in a metal oxide resist using a high-reflectance phase-shifting mask that results in image reversal", Proc. SPIE 12293, Photomask Technology 2022, 122930C (1 December 2022); https://doi.org/10.1117/12.2642302

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KEYWORDS

Photomasks

Semiconducting wafers

Calibration

Data modeling

Line width roughness

Logic

Optical lithography

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