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30 April 2023 Measurement and analysis of variations in via measurements using critical dimension scanning electron microscopes and e-beam massive metrology techniques
Genevieve A. Kane, Jennifer Church, Connor Franzese, Chris Mack, Cody Murray, Luciana Meli
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Proceedings Volume 12496, Metrology, Inspection, and Process Control XXXVII; 124960V (2023) https://doi.org/10.1117/12.2657650
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States
Abstract
We investigate the limits of characterizing extreme ultraviolet (EUV) patterned features, highlighting Critical Dimension Scanning Electron Microscopes (CDSEM) and E-beam massive metrology techniques. Due to local CDU variation from EUV stochastic variations, there is increased need for multiple measurement sites in CDSEM or enlarged fields of view (FOV), leading to an increase in measurement time. Massive ebeam metrology techniques provide a robust method for imaging more features within a larger field of view. We assess the trade-off between accuracy and throughput in determining global and local CD variation. Via data sets, with matched parameters for each tool set will be analyzed at different process points to obtain local and global CD variation for statistical analysis of both techniques.
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Genevieve A. Kane, Jennifer Church, Connor Franzese, Chris Mack, Cody Murray, and Luciana Meli "Measurement and analysis of variations in via measurements using critical dimension scanning electron microscopes and e-beam massive metrology techniques", Proc. SPIE 12496, Metrology, Inspection, and Process Control XXXVII, 124960V (30 April 2023); https://doi.org/10.1117/12.2657650
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KEYWORDS
Metrology
Electron microscopes
Scanning electron microscopy
Extreme ultraviolet
Critical dimension metrology
Statistical analysis
Stochastic processes
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