Unique spectral interferometry solutions for complex high aspect ratio 3D NAND structures

Jaesuk Yoon; Jongmin Park; Minjung Shin; Dongchul Ihm; Oshrat Bismuth; Smadar Ferber; Jacob Ofek; Igor Turovets; Isaac Kim

doi:10.1117/12.3010729

9 April 2024 Unique spectral interferometry solutions for complex high aspect ratio 3D NAND structures

Jaesuk Yoon, Jongmin Park, Minjung Shin, Dongchul Ihm, Oshrat Bismuth, Smadar Ferber, Jacob Ofek, Igor Turovets, Isaac Kim

Author Affiliations +

Proceedings Volume 12955, Metrology, Inspection, and Process Control XXXVIII; 129551S (2024) https://doi.org/10.1117/12.3010729
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Abstract

We have demonstrated the unique capabilities of spectral interferometry (SI) with vertical traveling scatterometry algorithms (VTS) to solve 3D NAND challenges by measuring complex layer thicknesses of the multideck 3D structures directly from the VTS signals, without modeling, with Cell Over Periphery (COP) underlayer filtering. Multiple examples are presented in the paper, including the measurement of the thin and thick layers of memory structures above the complex logic arrays and the remaining thickness of the fully processed Si wafer from the back side after thinning. In addition, VTS and AI enable direct profiling of the deep through-type cell metal contacts in the areas with nonperiodic staircases and significant lateral variations under the measurement spot.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Jaesuk Yoon, Jongmin Park, Minjung Shin, Dongchul Ihm, Oshrat Bismuth, Smadar Ferber, Jacob Ofek, Igor Turovets, and Isaac Kim "Unique spectral interferometry solutions for complex high aspect ratio 3D NAND structures", Proc. SPIE 12955, Metrology, Inspection, and Process Control XXXVIII, 129551S (9 April 2024); https://doi.org/10.1117/12.3010729

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