Experimental verification of a model based decomposition method for double dipole lithography

Mark Eurlings; Stephen D. Hsu; Eric Hendrickx; Willem op 't Root; Thomas L. Laidig; Tsann-Bim Chiou; Alek Chen; Fung Chen; Geert Vandenberghe; Jo Finders

doi:10.1117/12.535221

28 May 2004 Experimental verification of a model-based decomposition method for double dipole lithography

Mark Eurlings, Stephen D. Hsu, Eric Hendrickx, Willem op 't Root, Thomas L. Laidig, Tsann-Bim Chiou, Alek Chen, Fung Chen, Geert Vandenberghe, Jo Finders

Author Affiliations +

Proceedings Volume 5377, Optical Microlithography XVII; (2004) https://doi.org/10.1117/12.535221
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

Double Dipole Lithography (DDL) is one of the candidates for extending optical lithography into the k₁=0.30 regime. In 2001 the first experimental 2D elbow structures were reported. In 2002 a rule based decomposition and a model assisted decomposition method were presented. In 2003 a new, model based decomposition step has been presented. Now we present the results of applying this model based decomposition by discussing the first experimental results on a 0.75 NA ArF scanner printing 70 nm lines at various pitches (160 nm and larger, i.e. k₁=0.31 and up). We provide an assessment of the current state of maturity of the DDL technology for the low-k₁ regime (0.3..0.4). This is based upon CD uniformity, 2D pattern fidelity and through pitch process latitude behavior.

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Mark Eurlings, Stephen D. Hsu, Eric Hendrickx, Willem op 't Root, Thomas L. Laidig, Tsann-Bim Chiou, Alek Chen, Fung Chen, Geert Vandenberghe, and Jo Finders "Experimental verification of a model-based decomposition method for double dipole lithography", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.535221

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