Dr. Mark Eurlings Profile

Dr. Mark Eurlings

System Engineer at ASML Netherlands BV

SPIE Involvement:

Author

Publications (10)

Proceedings Article | 16 April 2012 Paper

NXE:3100 full wafer imaging performance and budget verification

Eelco van Setten, Koen van Ingen Schenau, Mark O'Mahony, Thijs Hollink, Friso Wittebrood, Natalia Davydova, Mark Eurlings, Kees Feenstra, Jo Finders, Mircea Dusa, Stuart Young

Proceedings Volume 8352, 835205 (2012) https://doi.org/10.1117/12.918495

KEYWORDS: Photomasks, Semiconducting wafers, Extreme ultraviolet lithography, Imaging systems, Reticles, Extreme ultraviolet, Electroluminescence, Critical dimension metrology, Lithography, Scanning electron microscopy

Read Abstract +

Proceedings Article | 8 April 2011 Paper

Deep ultraviolet out-of-band contribution in extreme ultraviolet lithography: predictions and experiments

Gian Lorusso, Natalia Davydova, Mark Eurlings, Cemil Kaya, Yue Peng, Kees Feenstra, Theodore Fedynyshyn, Oliver Natt, Peter Huber, Christoph Zaczek, Stuart Young, Paul Graeupner, Eric Hendrickx

Proceedings Volume 7969, 79692O (2011) https://doi.org/10.1117/12.879381

KEYWORDS: Deep ultraviolet, Extreme ultraviolet, Photomasks, Aluminum, Reflectivity, Extreme ultraviolet lithography, Semiconducting wafers, Plasma, Photoresist materials, Data modeling

Read Abstract +

Extreme ultraviolet lithography (EUVL) sources emit a broad spectrum of wavelengths ranging from EUV to DUV and beyond. If the deep ultraviolet (DUV) reaches the wafer it will affect imaging performance by exposing the photoresist. Hence it is critical to determine the amount of DUV out of band (OoB) present in a EUVL tool, as well as its effect on the printed features on the wafer. In this study we investigate the effect of DUV OoB in EUVL. A model is developed in order to be able to quantify the DUV/EUV ratio at wafer level and all the required input parameters are estimated in the range from 140 to 400nm, as well as for the EUV at 13.5nm. The transmission of the optical system was estimated based on the optical design and reflectivity measurements of the mirrors. The mask reflectivity for multilayer (ML) and absorber was measured at wavelengths down to 140 nm and for EUV. The sensitivity to EUV and DUV for a variety of resist platforms was measured at 13.5 nm, 157 nm, 193 nm, 248 nm and 365 nm. The source spectra were also measured. By using these inputs, it was possible to estimate the DUV/EUV ratio for two different ASML tool configurations, the EUV Alpha Demo Tool and the NXE:3100. Both NXE:3100 with LPP (laser produced plasma) source and Alpha Demo Tool with DPP (discharge produced plasma) source show less than 1% DUV/EUV ratio in resist. The modeling predictions were compared to experimental results. A methodology is introduced to measure the DUV/EUV ratio at wafer level in situ. With this aim, an aluminum coated mask was fabricated and its reflectivity was qualified in both EUV and DUV wavelength range. By comparing the dose to clear exposures of a reflective blank and of the aluminum mask, it is possible to quantify the DUV/EUV ratio. The experimental results are in order of magnitude agreement with modeling predictions. The proposed experimental approach can be used to benchmark the DUV sensitivity of different resist platforms and may be used to monitor DUV OoB.

Proceedings Article | 27 January 2005 Paper

Development of automatic OPC treatment and layout decomposition for double dipole lithography for low-k1 imaging

Tsann-Bim Chiou, Alek Chen, Stephen Hsu, Mark Eurlings, Eric Hendrickx

Proceedings Volume 5645, (2005) https://doi.org/10.1117/12.575989

KEYWORDS: Optical proximity correction, Photomasks, Error analysis, Model-based design, Lithography, Calibration, Nanoimprint lithography, Scattering, Fiber optic illuminators, Binary data

Read Abstract +

To extend the application of current optical lithographic tools to next generation production technology, it is necessary to reduce the k1 factor in Rayleigh's resolution equation. Double dipole lithography (DDL) is one of the candidates for a low-k1 imaging technique and it is a viable solution for 65- and 45-nm technology nodes. Because DDL takes has the advantage of extreme off-axis illumination of the dipole, the printing capability of small features as well as their through-pitch common process window can be enhanced. However, as a dipole illuminator gains the benefits of high contrast only for structures perpendicular to the dipole orientation, the original mask layout must be converted into horizontal and vertical components and printed in a double exposure. Throughput will be sacrificed due to the multiple exposures. Nevertheless, DDL mask manufacture is relatively simple compared to the production of the more complicated phase shift mask (PSM) and chromeless phase lithography (CPL). As regards an overlay issued from the separate image composition, several papers have shown the minor effect on pattern fidelity using the current ArF scanner. To split the design layout according to the pattern orientation, the double exposure scheme needs an automatic layout conversion algorithm. To integrate the H V conversion with model- and/or rule-based optical proximity corrections (OPCs), several approaches for pattern decomposition associated with OPC treatment have been suggested. In this paper we will go over the development of model- and rule-based OPC treatment and will focus on current technology for accurate model-based OPC development with empirical model calibration. Using the technique the lithographic performances such as pattern fidelity, process window as well as overlay error sensitivity will be demonstrated. We focus on a 65-nm technology node with k1 near 0.31. Based on the success of tool development and verification, the DDL with full-chip OPC-treated decomposition will become a mature low-k1 imaging solution.

Proceedings Article | 20 August 2004 Paper

Double dipole lithography for 65-nm node and beyond: a technology readiness review

Stephen Hsu, Mark Eurlings, Eric Hendrickx, Douglas Van Den Broeke, Tsann-Bim Chiou, J. Fung Chen, Thomas Laidig, Xuelong Shi, Jo Finders

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557797

KEYWORDS: Reticles, Photomasks, Optical proximity correction, Line width roughness, Nanoimprint lithography, Semiconducting wafers, Printing, Stray light, Model-based design, Resolution enhancement technologies

Read Abstract +

Proceedings Article | 28 May 2004 Paper

Experimental verification of a model based decomposition method for double dipole lithography

Mark Eurlings, Stephen Hsu, Eric Hendrickx, Willem op 't Root, Thomas Laidig, Tsann-Bim Chiou, Alek Chen, Fung Chen, Geert Vandenberghe, Jo Finders

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.535221

KEYWORDS: Line width roughness, Electroluminescence, Scanning electron microscopy, Photomasks, Lithography, Design for manufacturing, Semiconducting wafers, Printing, Spatial frequencies, Optical proximity correction

Read Abstract +

Proceedings Article | 26 June 2003 Paper

65-nm full-chip implementation using double dipole lithography

Stephen Hsu, J. Fung Chen, Noel Cororan, William Knose, Douglas Van Den Broeke, Thomas Laidig, Kurt Wampler, Xuelong Shi, Michael Hsu, Mark Eurlings, Jo Finders, Tsann-Bim Chiou, Robert Socha, Will Conley, Yen Hsieh, Steve Tuan, Frank Hsieh

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485445

KEYWORDS: Reticles, Photomasks, Model-based design, Scattering, Optical proximity correction, Stray light, Resolution enhancement technologies, 3D modeling, Logic, Binary data

Read Abstract +

Proceedings Article | 30 July 2002 Paper

Dipole decomposition mask design for full-chip implementation at 100-nm technology node and beyond

Stephen Hsu, Noel Corcoran, Mark Eurlings, William Knose, Thomas Laidig, Kurt Wampler, Sabita Roy, Xuelong Shi, Chungwei Michael Hsu, J. Fung Chen, Jo Finders, Robert Socha, Mircea Dusa

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474596

KEYWORDS: Optical proximity correction, Photomasks, Reticles, Model-based design, Manufacturing, Semiconducting wafers, Scattering, Resolution enhancement technologies, Printing, Nanoimprint lithography

Read Abstract +

Proceedings Article | 14 September 2001 Paper

Can DUV take us below 100 nm?

Jo Finders, Louis Jorritsma, Mark Eurlings, Richard Moerman, Henk van Greevenbroek, Jan van Schoot, Donis Flagello, Robert Socha, Thomas Stammler

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435706

KEYWORDS: Polarization, Deep ultraviolet, Reticles, Lithography, Photomasks, Printing, Cadmium, Lithographic illumination, Diffraction, Critical dimension metrology

Read Abstract +

Proceedings Article | 26 April 2001 Paper

0.11-um imaging in KrF lithography using dipole illumination

Mark Eurlings, Eelco van Setten, Juan Andres Torres, Mircea Dusa, Robert Socha, Luigi Capodieci, Jo Finders

Proceedings Volume 4404, (2001) https://doi.org/10.1117/12.425215

KEYWORDS: Atrial fibrillation, Electroluminescence, Lithographic illumination, Printing, Reticles, Lithography, Optical lithography, Photomasks, Manufacturing, Cadmium

Read Abstract +

Proceedings Article | 20 October 2000 Paper

Low-k1 imaging: how low can we go?

Jo Finders, Mark Eurlings, Koen Van Ingen Schenau, Mircea Dusa, Peter Jenkins

Proceedings Volume 4226, (2000) https://doi.org/10.1117/12.404849

KEYWORDS: Photomasks, Optical lithography, Lithographic illumination, Phase shifts, Binary data, Lithography, Nanoimprint lithography, Scattering, Optical proximity correction, Printing

Read Abstract +

As critical dimensions continue to shrink in line with the SIA roadmap, the ratio of printed feature size and accepted wavelengths for optical lithography is driving inexorably towards the theoretical limitation of 0.25 for the Raleigh equation constant, k1. With the drive to lower k1 values fundamental limitations start to impact optical lithography. One example is the inability to simultaneously print features at different duty cycles with acceptable process windows. In the k1 regime down to 0.5, dense and isolated features could be printed in one with acceptable process windows. Today advanced lithography is operating at k1 values of 0.42-0.37 using KrF excimer laser light sources at a wavelength ((lambda) ) of 248nm. High lens Numerical Aperture (NA) is required to obtain sufficient aerial image contrast for dense lines, but results in reduced depth of focus which scales proportional to (lambda) /NA². Using off-axis illumination techniques such as annular illumination can compensate the reduction in depth of focus for dense lines. For isolated lines high NA has only limited impact on the aerial image contrast due to the difference in the diffraction pattern and only serves to reduce the limited depth of focus which, unlike dense lines, does not benefit from the application of off-axis illumination. Use of increasingly strong imaging enhancement techniques will be required at lower k1 values resulting in further trade-offs to be addressed in pattern dependency. For example, quadrupole and di-pole off-axis illumination provides stronger enhancement to the available process window than annular illumination but only for features with specific orientations. In this paper an overview of the different imaging enhancement techniques will be given and examples of the trade-offs between enhancement and techniques, constraints on orientations and duty cycles will have to be applied in the device design. Alternatively, individual device layers will have to be separated by feature type, duty cycle and orientation to allow optimum enhancement techniques to be applied for each feature using multiple exposures. These approaches will be required if optical lithography at k1 values around 0.3 is to be realized. In the paper we will compare the use of two very strong enhancement techniques, dipole illumination and alternating (Levinson type) Phase Shift Mask with respect to process latitude, complexity and aberration sensitivity. To complete the review of low k1 the economic viability of optical lithography utilizing these strong enhancement techniques will be analyzed in terms of Cost of Ownership.

Showing 5 of 10 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years