Extendibility of single mask exposure for practical ArF immersion lithography

Takashi Adachi; Yuichi Inazuki; Takanori Sutou; Takaharu Nagai; Nobuhito Toyama; Yasutaka Morikawa; Hiroshi Mohri; Naoya Hayashi

doi:10.1117/12.729024

15 May 2007 Extendibility of single mask exposure for practical ArF immersion lithography

Takashi Adachi, Yuichi Inazuki, Takanori Sutou, Takaharu Nagai, Nobuhito Toyama, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi

Author Affiliations +

Proceedings Volume 6607, Photomask and Next-Generation Lithography Mask Technology XIV; 660735 (2007) https://doi.org/10.1117/12.729024
Event: Photomask and Next-Generation Lithography Mask Technology XIV, 2007, Yokohama, Japan

Abstract

The ArF water immersion is one of the most promising candidate technologies for 45-nm node lithography. But it have been predicted that the realization of 32-nm node (minimum half pitch 45nm) is very difficult when using the water immersion of 1.35 NA and single mask exposure. Therefore, some double-exposure technologies are expected for 32-nm node logic device. However, the single mask exposure would be expected because it has very big advantage of short process time and/or cost etc., compared to other double-exposure methods. In this research, we evaluated two NA setting of ArF immersion as the models and the required structure and error budget of photomasks. One is the maximum NA of water immersion (= 1.35) and another is using high refractive index materials with NA of 1.55. The lithographic performance was evaluated for line and space pattern through various pattern pitches with optical proximity correction (OPC). The evaluation items of printing performance are CD-DOF, contrast-DOF and MEEF, etc. The suitable kind of mask and structure are also considered with effect of several kinds of mask topography error. The limit of single mask exposure will be examined by setting the restriction such as minimum half pitch and so on.

Citation Download Citation

Takashi Adachi, Yuichi Inazuki, Takanori Sutou, Takaharu Nagai, Nobuhito Toyama, Yasutaka Morikawa, Hiroshi Mohri, and Naoya Hayashi "Extendibility of single mask exposure for practical ArF immersion lithography", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 660735 (15 May 2007); https://doi.org/10.1117/12.729024

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KEYWORDS

Photomasks

SRAF

Lithography

Water

Lithographic illumination

Printing

Refractive index

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