High-sensitivity green resist material with organic solvent-free spin-coating and tetramethylammonium hydroxide-free water-developable processes for EB and EUV lithography

Satoshi Takei; Makoto Hanabata; Akihiro Oshima; Miki Kashiwakura; Takahiro Kozawa; Seiichi Tagawa

doi:10.1117/12.2081829

20 March 2015 High-sensitivity green resist material with organic solvent-free spin-coating and tetramethylammonium hydroxide-free water-developable processes for EB and EUV lithography

Satoshi Takei, Makoto Hanabata, Akihiro Oshima, Miki Kashiwakura, Takahiro Kozawa, Seiichi Tagawa

Author Affiliations +

Proceedings Volume 9425, Advances in Patterning Materials and Processes XXXII; 94251P (2015) https://doi.org/10.1117/12.2081829
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

We investigated the eco-friendly electron beam (EB) and extreme-ultraviolet (EUV) lithography using a high-sensitive negative type of green resist material derived from biomass to take advantage of organic solvent-free water spin-coating and tetramethylammonium hydroxide(TMAH)-free water-developable techniques. A water developable, non-chemically amplified, high sensitive, and negative tone resist material in EB lithography was developed for environmental affair, safety, easiness of handling, and health of the working people, instead of the common developable process of TMAH. The material design concept to use the water-soluble resist material with acceptable properties such as pillar patterns with less than 100 nm in high EB sensitivity of 10 μC/cm² and etch selectivity with a silicon-based middle layer in CF₄ plasma treatment was demonstrated for EB and EUV lithography.

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Satoshi Takei, Makoto Hanabata, Akihiro Oshima, Miki Kashiwakura, Takahiro Kozawa, and Seiichi Tagawa "High-sensitivity green resist material with organic solvent-free spin-coating and tetramethylammonium hydroxide-free water-developable processes for EB and EUV lithography", Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94251P (20 March 2015); https://doi.org/10.1117/12.2081829

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