PROCEEDINGS VOLUME 1805
MICROELECTRONIC PROCESSING '92 | 20-25 SEPTEMBER 1992
Submicrometer Metallization: Challenges, Opportunities, and Limitations
IN THIS VOLUME

0 Sessions, 35 Papers, 0 Presentations
Reliability  (8)
MICROELECTRONIC PROCESSING '92
20-25 September 1992
San Jose, CA, United States
Metallization and Interconnection
Proc. SPIE 1805, Issues and opportunities for submicron metallization systems, 0000 (21 May 1993); doi: 10.1117/12.145450
Proc. SPIE 1805, Amorphous metallic alloys: a new advance in thin-film diffusion barriers for copper metallization, 0000 (21 May 1993); doi: 10.1117/12.145460
Materials and Processing Issues
Proc. SPIE 1805, Improvement of metal step coverage of VLSI device structures in a manufacturing environment, 0000 (21 May 1993); doi: 10.1117/12.145469
Reliability
Proc. SPIE 1805, Control of stress-void formation in aluminum-copper filled vias, 0000 (21 May 1993); doi: 10.1117/12.145477
Electromigration
Proc. SPIE 1805, Electromigration and current-carrying implications for aluminum-based metallurgy with tungsten stud via interconnections, 0000 (21 May 1993); doi: 10.1117/12.145481
Proc. SPIE 1805, Ti-thickness-dependent electromigration resistance for Ti/Al-Cu-Si metallization with and without barrier rapid-thermal-anneal in an ammonia ambient, 0000 (21 May 1993); doi: 10.1117/12.145482
Proc. SPIE 1805, Effects of texture, microstructure, and alloy content on electromigration of aluminum-based metallization, 0000 (21 May 1993); doi: 10.1117/12.145483
Proc. SPIE 1805, Role of surface diffusion in electromigration phenomena, 0000 (21 May 1993); doi: 10.1117/12.145484
Reliability
Proc. SPIE 1805, Effect of strain on diffusion kinetics and activation energy for Al grain-boundary diffusion: a computer simulation, 0000 (21 May 1993); doi: 10.1117/12.145451
Characterization and Interconnect Modeling
Proc. SPIE 1805, Interpretation of current-induced noise for detection of ULSI/VLSI interconnection reliability problems, 0000 (21 May 1993); doi: 10.1117/12.145452
Proc. SPIE 1805, Characterization of spin-on titanium nitride, 0000 (21 May 1993); doi: 10.1117/12.145453
Proc. SPIE 1805, New nondestructive method to measure metal film thickness, 0000 (21 May 1993); doi: 10.1117/12.145454
Materials and Processing Issues
Proc. SPIE 1805, Highly reliable high-temperature aluminum sputter metallization, 0000 (21 May 1993); doi: 10.1117/12.145455
Characterization and Interconnect Modeling
Proc. SPIE 1805, Micron and submicron interconnect modeling, 0000 (21 May 1993); doi: 10.1117/12.145456
Materials and Processing Issues
Proc. SPIE 1805, Via hole filling with metal melting by laser irradiation for submicron metallization, 0000 (21 May 1993); doi: 10.1117/12.145457
Metallization and Interconnection
Proc. SPIE 1805, Smart-power metallization: issues, challenges, and opportunities, 0000 (21 May 1993); doi: 10.1117/12.145458
Characterization and Interconnect Modeling
Proc. SPIE 1805, Sensitivity of s-parameter data of metal semiconductor field effect transistor to the source and gate resistances, 0000 (21 May 1993); doi: 10.1117/12.145459
Metallization and Interconnection
Proc. SPIE 1805, Giant-grain-copper metallization for high reliability and high-speed ULSI interconnects, 0000 (21 May 1993); doi: 10.1117/12.145461
Proc. SPIE 1805, Planarization film by plasma-enhanced chemical vapor deposition and low-temperature oxide as conformal insulator, 0000 (21 May 1993); doi: 10.1117/12.145462
Proc. SPIE 1805, Parylene as a conformal insulator for submicron multilayer interconnection, 0000 (21 May 1993); doi: 10.1117/12.145463
Materials and Processing Issues
Proc. SPIE 1805, Al-Si-Cu/TiN multilayer interconnection and Al-Ge reflow sputtering technologies for quarter-micron devices, 0000 (21 May 1993); doi: 10.1117/12.145464
Proc. SPIE 1805, Collimated sputtering of titanium liner films to control resistance of high-aspect-ratio contacts, 0000 (21 May 1993); doi: 10.1117/12.145465
Proc. SPIE 1805, Seamless application of rapid thermal processing in manufacturing, 0000 (21 May 1993); doi: 10.1117/12.145466
Reliability
Proc. SPIE 1805, Electromigration and stress reliability in multilevel interconnect metallization, 0000 (21 May 1993); doi: 10.1117/12.145467
Proc. SPIE 1805, Statistical distributions of stress and electromigration-induced failure, 0000 (21 May 1993); doi: 10.1117/12.145468
Proc. SPIE 1805, Impact of interlevel dielectric materials on stress-induced voiding of metal 1, 0000 (21 May 1993); doi: 10.1117/12.145470
Proc. SPIE 1805, Modeling stress-induced void growth in Al-4wt%Cu lines, 0000 (21 May 1993); doi: 10.1117/12.145471
Electromigration
Proc. SPIE 1805, Modeling electromigration lifetime under pulsed and AC current stress, 0000 (21 May 1993); doi: 10.1117/12.145472
Proc. SPIE 1805, Barrier layer effects and the use of Ti:W capping layers on the electromigration performance of Al-Si(1%)-Cu(0.5%) alloy, 0000 (21 May 1993); doi: 10.1117/12.145473
Proc. SPIE 1805, Morphology and crystallography of electromigration-induced transgranular slit failures in aluminum alloy interconnects, 0000 (21 May 1993); doi: 10.1117/12.145474
Characterization and Interconnect Modeling
Proc. SPIE 1805, Technological limitations in submicron on-chip interconnect, 0000 (21 May 1993); doi: 10.1117/12.145475
Proc. SPIE 1805, Performance consideration for the scaling of submicron on-chip interconnections, 0000 (21 May 1993); doi: 10.1117/12.145476
Reliability
Proc. SPIE 1805, Thermally induced stresses and electromigration failure, 0000 (21 May 1993); doi: 10.1117/12.145478
Proc. SPIE 1805, Three-dimensional finite element calculations of thermal stress in aluminum interconnect with tungsten via-studs, 0000 (21 May 1993); doi: 10.1117/12.145479
Metallization and Interconnection
Proc. SPIE 1805, Polishing characteristics of different glass films, 0000 (21 May 1993); doi: 10.1117/12.145480
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