PROCEEDINGS VOLUME 3213
MICROELECTRONIC MANUFACTURING | 1-2 OCTOBER 1997
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III
MICROELECTRONIC MANUFACTURING
1-2 October 1997
Austin, TX, United States
Contamination and Particle Controls in Integrated Circuit Manufacturing
Proc. SPIE 3213, Defect reduction in different periods of a fab's life, 0000 (25 August 1997); doi: 10.1117/12.284622
Proc. SPIE 3213, Control of polysilicon on-film particulates with on-product measurements, 0000 (25 August 1997); doi: 10.1117/12.284632
Proc. SPIE 3213, Implementation of in-situ particle monitor to improve process condition prediction, 0000 (25 August 1997); doi: 10.1117/12.284642
Proc. SPIE 3213, Microcontamination control in a Lam 4400 plasma etcher: 15X reduction in particle defect densities during SF6/He silicon trench etch, 0000 (25 August 1997); doi: 10.1117/12.284647
Proc. SPIE 3213, Comparison of submicron particle counting and sizing results from different sensors in semiconductor process chemicals, 0000 (25 August 1997); doi: 10.1117/12.284648
Proc. SPIE 3213, Verifying and preventing recurrence in metal defects for VLSI manufacturing, 0000 (25 August 1997); doi: 10.1117/12.284649
Novel Sensors, Metrology, and Process Modeling in Integrated Circuit Manufacturing
Proc. SPIE 3213, Application of rf sensors for real-time control of inductively coupled plasma etching equipment, 0000 (25 August 1997); doi: 10.1117/12.284650
Proc. SPIE 3213, New method for end-point detection in reactive ion etching of polysilicon, 0000 (25 August 1997); doi: 10.1117/12.284623
Proc. SPIE 3213, Scatterometry measurements for process monitoring of polysilicon gate etch, 0000 (25 August 1997); doi: 10.1117/12.284624
Proc. SPIE 3213, Development and characterization of multilevel metal interconnection etch process, 0000 (25 August 1997); doi: 10.1117/12.284625
Proc. SPIE 3213, Model-based control of chemical mechanical polishing, 0000 (25 August 1997); doi: 10.1117/12.284626
Proc. SPIE 3213, Modeling of OES data to estimate etch rate for etching equipment, 0000 (25 August 1997); doi: 10.1117/12.284627
Proc. SPIE 3213, Automation of a remote plasma-enhanced chemical vapor deposition system using LabVIEW, 0000 (25 August 1997); doi: 10.1117/12.284628
Proc. SPIE 3213, Numerical optimization method for semiconductor diffusion recipe programming, 0000 (25 August 1997); doi: 10.1117/12.284629
Factory Automation and Recipe Optimization in Integrated Circuit Manufacturing
Proc. SPIE 3213, Impact of multi-product and -process manufacturing on run-to-run control, 0000 (25 August 1997); doi: 10.1117/12.284630
Proc. SPIE 3213, Analysis on the metal etch resist selectivity measurement, 0000 (25 August 1997); doi: 10.1117/12.284631
Proc. SPIE 3213, Fast push at polysilicon deposition to reduce intrapoly oxide, 0000 (25 August 1997); doi: 10.1117/12.284633
Proc. SPIE 3213, CIM for 300-mm semiconductor fab, 0000 (25 August 1997); doi: 10.1117/12.284634
Proc. SPIE 3213, Flexible data registration and automation in semiconductor production, 0000 (25 August 1997); doi: 10.1117/12.284635
Proc. SPIE 3213, Evaluation of model predictive control in run-to-run processing in semiconductor manufacturing, 0000 (25 August 1997); doi: 10.1117/12.284636
Proc. SPIE 3213, Compatibility of top antireflective coatings and photoresists, 0000 (25 August 1997); doi: 10.1117/12.284637
Proc. SPIE 3213, Using a SiC injector in a polydeposition system to improve mean time between failure, 0000 (25 August 1997); doi: 10.1117/12.284638
Poster Session
Proc. SPIE 3213, Electrical characterization of FSG low K dielectric deposition in HDP and PECVD tools, 0000 (25 August 1997); doi: 10.1117/12.284639
Proc. SPIE 3213, Alkali metal ion monitoring and reduction in dielectric oxides, 0000 (25 August 1997); doi: 10.1117/12.284640
Proc. SPIE 3213, Environmental and substrate material factors' effect on metal lithography corrosion, 0000 (25 August 1997); doi: 10.1117/12.284641
Proc. SPIE 3213, Plasma reactor etch modeling using inductively coupled plasma spectroscopy diagnostic techniques, 0000 (25 August 1997); doi: 10.1117/12.284643
Proc. SPIE 3213, Comparison of best process focus and machine focus, 0000 (25 August 1997); doi: 10.1117/12.284644
Proc. SPIE 3213, Real-time control of etching processes: experimental results, 0000 (25 August 1997); doi: 10.1117/12.284645
Proc. SPIE 3213, High-pressure investigations of conducting materials, 0000 (25 August 1997); doi: 10.1117/12.284646
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