Recent advances in fluorinated resists for application at 157 nm

Francis M. Houlihan; Raj Sakamuri; Andrew Romano; David Rentkiewicz; Ralph R. Dammel; Willard E. Conley; Daniel A. Miller; Michael Sebald; Nickolay Stepanenko; Matthias Markert; Uta Mierau; Inge Vermeir; Christoph Hohle; Toshiro Itani; Masato Shigematsu; Etsurou Kawaguchi

doi:10.1117/12.537541

14 May 2004 Recent advances in fluorinated resists for application at 157 nm

Francis M. Houlihan, Raj Sakamuri, Andrew Romano, David Rentkiewicz, Ralph R. Dammel, Willard E. Conley, Daniel A. Miller, Michael Sebald, Nickolay Stepanenko, Matthias Markert, Uta Mierau, Inge Vermeir, Christoph Hohle, Toshiro Itani, Masato Shigematsu, Etsurou Kawaguchi

Author Affiliations +

Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.537541
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

This paper is part of our continuing work on a new generation of more transparent, 157 nm resist platforms, which are based upon capping of fluoroalcohol-substituted, transparent perfluorinated resins (TFR) with a tert-butoxycarbonylmethyl (BOCME) moiety. Recent results indicate that by optimizing both resin structure and loading of photoacid generator and base additive a good compromise can be achieved between resolution power, dark erosion resistance, sensitivity and transparency at 157 nm. Specifically, it was found that a decrease in PAG (50% nominal loading) and base loading (75% nominal loading), coupled with optimization of the TFR resins to achieve higher transparency, gives the best compromise of properties. In this manner, resist systems with a transparency as low as 0.87 AU/micron were designed capable of resolving 60 nm 1:1 features, at a dose of 92 mJ/cm² (non corrected for sigma), using a strong phase shift mask, and a sigma of 0.3 on a Exitech 157 nm small field mini-stepper. This type of resist material has also been imaged with a larger field tool (DUV30 Micrascan VII) to give 80 nm 1.1.5 L/S features at a dose of 135 mJ/cm² employing using a Binary mask (σ=0.85). Finally, it was found that our BOCME-TFR based resist system can be used to transfer a 120 nm L/S pattern (imaged by 193 nm lithography) into a hardmask stack on top of silicon.

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Francis M. Houlihan, Raj Sakamuri, Andrew Romano, David Rentkiewicz, Ralph R. Dammel, Willard E. Conley, Daniel A. Miller, Michael Sebald, Nickolay Stepanenko, Matthias Markert, Uta Mierau, Inge Vermeir, Christoph Hohle, Toshiro Itani, Masato Shigematsu, and Etsurou Kawaguchi "Recent advances in fluorinated resists for application at 157 nm", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.537541

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